Application of a Gas-Injection System during the FIB-TOF-SIMS Analysis—Influence of Water Vapor and Fluorine Gas on Secondary Ion Signals and Sputtering Rates

Agnieszka Priebe,Ivo Utke,Laszlo Pethö,Johann Michler,Laszlo Pethö
DOI: https://doi.org/10.1021/acs.analchem.9b02287
IF: 7.4
2019-08-20
Analytical Chemistry
Abstract:Combining a Gas-Injection System (GIS) with the Focused Ion Beam (FIB) has a broad scope of applications in sample preparation such as protective layer deposition, increasing material sputtering rates, and reducing FIB-related artifacts. On the other hand, injecting certain specific gases during a Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) analysis can significantly increase element ionization probability and, therefore, improve the quality of 3D representation of a sample elemental structure. In this work, for the first time, the potential of GIS for enhancing secondary ion signals acquired using a TOF detector incorporated into a commercial Ga+ FIB-SEM (Focused Ion Beam combined with Scanning Electron Microscope) instrument is presented. The depth profiles of pure metals (thin films of Cu, Zr, Ag, and W with the thickness in the order of 100 nm) were acquired under ambient vacuum conditions as well as under an exposure to water and fluorine gases. The influence of supplementary gases on t...
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