Importance of the semimetallic state for the quantum Hall effect in

M. M. Piva,R. Wawrzyńczak,Nitesh Kumar,L. O. Kutelak,G. A. Lombardi,R. D. dos Reis,C. Felser,M. Nicklas
DOI: https://doi.org/10.1103/physrevmaterials.8.l041202
IF: 3.98
2024-04-30
Physical Review Materials
Abstract:At ambient pressure, HfTe5 is a material at the boundary between a weak and a strong topological phase, which can be tuned by changes in its crystalline structure or by the application of high magnetic fields. It exhibits a Lifshitz transition upon cooling, and three-dimensional (3D) quantum Hall effect (QHE) plateaus can be observed at low temperatures. Here, we have investigated the electrical transport properties of HfTe5 under hydrostatic pressure up to 3 GPa. We find a pressure-induced crossover from a semimetallic phase at low pressures to an insulating phase at about 1.5 GPa. Our data suggest the presence of a pressure-induced Lifshitz transition at low temperatures within the insulating phase around 2 GPa. The quasi-3D QHE is confined to the low-pressure region in the semimetallic phase. This reveals the importance of the semimetallic ground state for the emergence of the QHE in HfTe5 and thus favors a scenario based on a low carrier density metal in the quantum limit for the observed signatures of the quasiquantized 3D QHE. https://doi.org/10.1103/PhysRevMaterials.8.L041202 Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Open access publication funded by Max Planck Society. Published by the American Physical Society
materials science, multidisciplinary
What problem does this paper attempt to address?
This paper investigates the electrical transport properties of hafnium telluride (HfTe5) under high pressure and explores the origin of quantum Hall effect (QHE) in this material. HfTe5 is at the boundary between a weak topological phase and a strong topological phase under ambient pressure, which can be tuned by altering its crystal structure or applying high magnetic fields. Upon cooling, it undergoes a Lifshitz transition from one Fermi surface state to another. In pressure experiments, the researchers found that HfTe5 exhibits a semi-metallic state at low pressures and transitions to an insulating state as the pressure increases to about 1.5 GPa. At around 2 GPa, a pressure-induced Lifshitz transition is observed at low temperatures. The 3D quantum Hall effect is only observed in the semi-metallic phase at low pressures, indicating its occurrence is related to the metal quantum limit state with low carrier density, rather than the scenario requiring the presence of a band gap. The paper emphasizes the importance of maintaining uniform fluid pressure in high-pressure experiments, as some phenomena may have been missed in previous studies under non-uniform pressure conditions. Additionally, they observe a pressure-induced change in the carrier type from electron-like to hole-like at low temperatures, which may serve as evidence for another pressure-induced Lifshitz transition. In conclusion, this paper aims to address the physical mechanism of the quantum Hall effect in HfTe5, particularly how pressure influences its electronic properties and whether this effect depends on the material's semi-metallic ground state.