Intense 2.8 μm emission of Ho³⁺ doped PbF₂ single crystal

Peixiong Zhang,Jigang Yin,Baitao Zhang,Lianhan Zhang,Jiaqi Hong,Jingliang He,Yin Hang
DOI: https://doi.org/10.1364/OL.39.003942
2014-07-01
Abstract:A Ho³⁺-doped PbF₂ mid-IR laser crystal was successfully grown using the vertical Bridgman method. An intense 2.8 μm emission in Ho:PbF₂ crystal was observed for the first time. By analyzing the absorption and emission measurements of the Ho:PbF₂ crystal with the Judd-Ofelt theory, the intensity parameters Ω(2,4,6), exited state lifetimes, branching ratios, and emission cross-sections were calculated. It is found that the Ho:PbF₂ crystal has high fluorescence branching ratio (20.99%), large emission cross section (1.44×10⁻²⁰ cm²), long fluorescence lifetime (5.4 ms), and high quantum efficiency (88.4%) corresponding to the stimulated emission of Ho³⁺: ⁵I₆→⁵I₇ transition. The structure of Ho:PbF₂ crystal was also analyzed by the Raman spectrum, and it was found that the Ho:PbF₂ crystal possesses low phonon energy of 257 cm⁻¹. We propose that the Ho:PbF₂ crystal may be a promising material for 2.8 μm laser applications.
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