Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

Broad area diode laser with on-chip transverse Bragg grating stabilized in an off-axis external cavity

Broad-Area Laser Diode with 0.02 Nm Bandwidth and Diffraction Limited Output Due to Double External Cavity Feedback

Beam Quality Improvement of Broad Area Laser Diode with External Cavity Feedback

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

Achieving single-lobed far-field patterns of broad area laser diode with external cavity feedback

High-efficiency and high-brightness broad area laserdiodes with buried implantation current blocking

Wide-Spectrum Tuning and Narrowing of 780 nm Broad-Area Diode Laser with Littrow-Type Transmission Gratings

A Novel Short-Cavity Laser with Deep-Grating Distributed Bragg Reflectors

Ultra-short DBR Fiber Laser with High-Temperature Resistance Using Tilted Fiber Bragg Grating Output Coupler.

Quantum well lasers with broad spectra based on Bragg reflection waveguide

Simultaneous frequency stabilization, wavelength multiplexing and improvement of beam quality using a self-optimizing external cavity diode laser

Investigation of Beam Quality of External Cavity Laser Diodes

Fabrication of widely tunable SGDBR laser using butt-joint technique

High Power 980-Nm Broad-Area Lasers with Distributed Bragg Reflection Grating

Near-diffraction-limited Bragg Reflection Waveguide Lasers.

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

Narrow linewidth laser based on a sidewall grating active distributed Bragg reflector

Surface Bragg gratings for high brightness lasers

Short Cavity DBR Laser Using Vertical Groove Gratings for Large-Scale Photonic Integrated Circuits

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

Design studies for distributed Bragg reflectors for short-cavity edge-emitting lasers