Bessel‐Beam Direct Write of the Etch Mask in a Nano‐Film of Alumina for High‐Efficiency Si Solar Cells
Tomas Katkus,Soon Hock Ng,Haoran Mu,Nguyen Hoai An Le,Dominyka Stonytė,Zahra Khajehsaeidimahabadi,Gediminas Seniutinas,Justas Baltrukonis,Orestas Ulčinas,Mindaugas Mikutis,Vytautas Sabonis,Yoshiaki Nishijima,Michael Rienäcker,Udo Römer,Jan Krügener,Robby Peibst,Sajeev John,Saulius Juodkazis
DOI: https://doi.org/10.1002/adem.202400711
IF: 3.6
2024-09-02
Advanced Engineering Materials
Abstract:Laser patterning of dry‐plasma etch mask over centimeter‐scale regions with sub‐wavelength resolution on Si solar cells is demonstrated. The plasma etch protocol is developed for definition of a regular photonic crystal (PhC) pattern on the surface of Si solar cell. Light trapping with such PhC textures can break the ray optics Lambertian limit of light harvesting and reach higher efficiencies. Large surface area applications such as high efficiency >26% solar cells require surface patterning with 1–10 μm periodic patterns at high fidelity over 1–10 cm2 areas (before up scaling to 1 m2 ) to perform at, or exceed, the Lambertian (ray optics) limit of light trapping. Herein, a pathway is shown to high‐resolution sub‐1 μm etch mask patterning by ablation using direct femtosecond laser writing performed at room conditions (without the need for a vacuum‐based lithography approach). A Bessel beam is used to alleviate the required high surface tracking tolerance for ablation of 0.3–0.8 μm diameter holes in 40 nm alumina Al2O3 –mask at high writing speed, 7.5 cm s−1; a patterning rate 1 cm2 per 20 min. Plasma etching protocol was optimized for a zero‐mesa formation of photonic‐crystal‐trapping structures and smooth surfaces at the nanoscale level. The maximum of minority carrier recombination time of 2.9 ms was achieved after the standard wafer passivation etch; resistivity of the wafer was 3.5 Ω cm. Scaling up in area and throughput of the demonstrated approach is outlined.
materials science, multidisciplinary