Abstract:We report a sequential two-step vapor deposition process for growing mixed-dimensional van der Waals (vdW) materials, specifically Te nanowires (1D) and MoS$_2$ (2D), on a single SiO$_2$ wafer. Our growth technique offers a unique potential pathway to create large scale, high-quality, defect-free interfaces. The assembly of samples serves a twofold application: first, the as-prepared heterostructures (Te NW/MoS$_2$) provide insights into the atomically thin depletion region of a 1D/2D vdW diode, as revealed by electrical transport measurements and density functional theory-based quantum transport calculations. The charge transfer at the heterointerface is confirmed using Raman spectroscopy and Kelvin probe force microscopy (KPFM). We also observe modulation of the rectification ratio with varying applied gate voltage. Second, the non-hybrid regions on the substrate, consisting of the as-grown individual Te nanowires and MoS$_2$ microstructures, are utilized to fabricate separate p- and n-FETs, respectively. Furthermore, the ionic liquid gating helps to realize low-power CMOS inverter and all basic logic gate operations using a pair of n- and p- field-effect transistors (FETs) on Si/SiO$_2$ platform. This approach also demonstrates the potential for unifying diode and CMOS circuits on a single platform, opening opportunities for integrated analog and digital electronics.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to develop a new method to realize unified analog and digital electronic devices by growing van der Waals (vdW) heterostructures of mixed dimensions (specifically Te nanowires and MoS₂) on a single SiO₂ substrate. Specifically, the research aims to: 1. **Create a high - quality, defect - free interface**: Through a two - step vapor deposition method, simultaneously grow one - dimensional (1D) Te nanowires and two - dimensional (2D) MoS₂ on a single substrate to form a high - quality, defect - free 1D/2D heterojunction. 2. **Explore the atomic - layer - thin depletion region**: Utilize electrical transport measurements and density - functional - theory (DFT) - based quantum transport calculations to study the characteristics of the atomic - layer - thin depletion region in 1D/2D vdW diodes, and confirm the charge transfer at the heterojunction interface through Raman spectroscopy and Kelvin probe force microscopy (KPFM). 3. **Achieve low - power - consumption CMOS logic - gate operations**: Use ionic - liquid - gate technology to fabricate p - type and n - type field - effect transistors (FETs) respectively, and implement basic logic - gate operations on the same substrate, demonstrating its potential application in low - power - consumption CMOS inverters and all basic logic gates. 4. **Unify analog and digital circuits**: By integrating diodes and CMOS circuits on the same platform, explore the possibility of unifying analog and digital electronic functions, thus providing new ideas for future integrated - circuit design. ### Main challenges - **Material selection and growth**: Find a suitable p - type material to construct vdW p - n heterojunctions and overcome the inherent n - type characteristics of most 2D transition - metal dichalcogenides (TMDCs). - **Performance optimization**: Optimize the mobility and on - off ratio of FETs through precise control of growth conditions and the use of techniques such as ionic - liquid - gate, to improve device performance. - **Integration and compatibility**: Ensure the compatibility and efficient integration of different materials and structures on the same substrate to achieve complex circuit functions. ### Solutions - **Innovative growth method**: Adopt a two - step vapor deposition method to successfully achieve the coexistence of Te nanowires and MoS₂ on a single substrate, forming a high - quality 1D/2D heterojunction. - **Detailed characterization and verification**: Verify the quality and characteristics of the heterojunction through multiple characterization means (such as Raman spectroscopy, SEM, AFM, KPFM, etc.). - **Functional demonstration**: Demonstrate the basic functions of p - n diodes and CMOS logic gates based on Te/MoS₂ heterojunctions, proving their potential applications in analog and digital circuits. In conclusion, this research provides new approaches and technical support for the design and manufacturing of high - performance, multi - functional electronic devices in the future.

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