Slow interband recombination promotes an anomalous thermoelectric response of the $p-n$ junctions

Aleksandr S. Petrov,Dmitry Svintsov

2024-12-09

Abstract:Thermoelectric effects in $p-n$ junctions are widely used for energy generation with thermal gradients, creation of compact Peltier refrigerators and, most recently, for sensitive detection of infrared and terahertz radiation. It is conventionally assumed that electrons and holes creating thermoelectric current are in equilibrium and share the common quasi-Fermi level. We show that lack of interband equilibrium results in an anomalous sign and magnitude of thermoelectric voltage developed across the $p-n$ junction. The anomalies appear provided the diffusion length of minority carriers exceeds the size of hot spot at the junction. Normal magnitude of thermoelectric voltage is partly restored if interband tunneling at the junction is allowed. The predicted effects can be relevant to the cryogenically cooled photodetectors based on bilayer graphene and mercury cadmium telluride quantum wells.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **Abnormal thermoelectric response in p - n junctions due to slow interband recombination**. Specifically, the author explores the phenomenon of abnormal sign and magnitude changes in the thermoelectric voltage in p - n junctions when the diffusion length of minority carriers exceeds the hot - spot size.

### Problem Background

Traditional thermoelectric effect models assume that electrons and holes are in equilibrium in the thermoelectric current and share a common quasi - Fermi level. However, this assumption ignores the influence of the interband non - equilibrium state. When the diffusion length of minority carriers exceeds the hot - spot size, the interband recombination rate slows down, which will cause abnormal changes in the sign and magnitude of the thermoelectric voltage.

### Main Research Contents

1. **Influence of Interband Non - equilibrium State**:
- When the diffusion length of minority carriers exceeds the hot - spot size, the interband recombination rate slows down, resulting in changes in the sign and magnitude of the thermoelectric voltage.
- The change in the thermoelectric voltage depends on the interband recombination rate. When the recombination rate is very low, the thermoelectric voltage can even change sign.

2. **Theoretical Model**:
- The author established a model based on the drift - diffusion equation, considering the influence of the quasi - Fermi level gradients of electrons and holes and the temperature gradient on the current.
- The interband recombination rate \( R(x) \) was introduced into the model, and the changes in the thermoelectric voltage under different recombination rates were analyzed.

3. **Possibility of Experimental Verification**:
- The paper discusses the abnormal thermoelectric responses observed in low - temperature - cooled photodetectors, such as bilayer graphene and mercury cadmium telluride quantum wells.
- Some experimental conditions are proposed, for example, using a focused infrared laser to form a hot - spot so that non - equilibrium carriers can move freely within the hot - spot without recombination.

### Key Formulas

- The expression for the thermoelectric voltage \( V_{ph} \) is:
\[
V_{ph}=\left(1 - g\left(\frac{\kappa L}{2}\right)\right) V_{ph}^{\infty}+g\left(\frac{\kappa L}{2}\right) V_{ph}^{0}
\]
where:
- \( V_{ph}^{\infty} \) represents the thermoelectric voltage in the fast recombination limit:
\[
V_{ph}^{\infty}=- 2S_n^{\infty}\delta T(0)
\]
- \( V_{ph}^{0} \) represents the thermoelectric voltage in the slow recombination limit:
\[
V_{ph}^{0}=- 2S_n^{0}\delta T(0)
\]
- The weight function \( g(\xi) \) is defined as:
\[
g(\xi)=\frac{1}{\xi^2}-\frac{1}{\xi^2\cosh(\xi)}
\]
- The reciprocal of the diffusion length \( \kappa \) is given by:
\[
\kappa=\sqrt{\frac{e^{2}n_R}{T_0\tau_R\rho_{tot}}}
\]
where \( \rho_{tot}=\left(\frac{1}{\sigma_e}+\frac{1}{\sigma_h}\right) \) is the total resistivity.

### Conclusion

Through theoretical analysis and numerical simulation, the author shows that suppressing interband recombination will lead to an abnormal reversal of the thermoelectric voltage in p - n junctions. This phenomenon is particularly obvious when the diffusion length of minority carriers exceeds the hot - spot size. In addition, the finite tunnel transparency will act as a local recombination center and partially restore the normal thermoelectric response.

### Practical Applications

This research is of great significance for the design of efficient thermoelectric devices, photodetectors, etc., especially for devices operating at low temperatures, such as detectors based on bilayer graphene and mercury cadmium telluride quantum wells.