Abstract:Flexoelectricity is a property of all dielectric materials, where inhomogeneous strain induces electrical polarization. This effect becomes particularly prominent at the nanoscale where larger strain gradients can be obtained. While flexoelectric charges have been measured in mm-scale systems, direct measurements in nanoscale-thickness materials have not yet been achieved. Given that one of the most prominent applications of flexoelectricity is in nano-electro-mechanical systems (NEMS), confirming the presence and magnitude of the effect at these scales is essential. This study presents the first-ever measurements of flexoelectric-generated charges (direct effect) in nanoscale-thickness materials, using cantilevers with a 50 nm hafnium oxide layer. We confirm that the estimated flexoelectric coefficient from said measurements aligns with the values obtained from complementary experiments using the flexoelectric inverse effect. Additionally, by changing the cantilever geometry (modifying the width of the cantilevers), we demonstrate a 40% increase in the effective flexoelectric coefficient, explained by the interplay of different flexoelectric tensor components. These findings not only validate the presence of flexoelectric effects at the nanoscale but also open the possibility for full flexoelectric transduction of the motion in NEMS/MEMS devices.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is to directly measure the flexoelectricity at the nanoscale. Specifically, the main objectives of the research include: 1. **Directly measure the flexoelectric effect of nanometer - thick materials for the first time**: - The flexoelectric effect is a property that exists in all dielectric materials, in which inhomogeneous strain induces electric polarization. Although flexoelectric charges have been measured in millimeter - scale systems, direct measurement in nanometer - thick materials has not been achieved yet. - In this paper, by using a micro - cantilever beam with a 50 - nanometer - thick hafnium oxide layer, the charge generated by the flexoelectric effect in nanoscale materials was measured for the first time. 2. **Verify the accuracy of the flexoelectric coefficient**: - The researchers confirmed that the flexoelectric coefficient estimated from these measurements is consistent with the value obtained through complementary experiments (using the inverse flexoelectric effect), thus verifying the existence and strength of the flexoelectric effect. 3. **Explore the influence of geometry on the flexoelectric effect**: - By changing the width of the cantilever beam (i.e., modifying the geometry of the cantilever beam), the researchers showed that the effective flexoelectric coefficient increased by 40%, which is attributed to the interaction between different flexoelectric tensor components. - This finding not only verifies the existence of the flexoelectric effect at the nanoscale but also provides the possibility of fully converting flexoelectric motion in NEMS/MEMS devices. ### Mathematical formula representation The basic relationship of the flexoelectric effect can be represented by the following formula: \[ P = \mu \frac{\partial \epsilon}{\partial z} \] where: - \( P \) is the generated polarization, - \( \mu \) is the flexoelectric coefficient, - \( \frac{\partial \epsilon}{\partial z} \) is the strain gradient. For the calculation of the effective flexoelectric coefficient, the following formula is given in the paper: \[ \mu_{\text{eff}} = \frac{C_{\text{meas}} \cdot V_{\text{motional}}}{W \cdot \phi_m'(L) \cdot u} \] where: - \( C_{\text{meas}} \) is the total capacitance of the measurement path, - \( V_{\text{motional}} \) is the voltage generated by the flexoelectric effect, - \( W \) is the width of the cantilever beam, - \( \phi_m'(L) \) is the first - order derivative of the modal shape function, - \( u \) is the displacement of the tip of the cantilever beam. ### Summary This research has solved the technical problem of measuring the flexoelectric effect at the nanoscale and laid the foundation for the future development of new sensors, actuators, and energy - harvesting devices based on the flexoelectric effect. These findings are of great significance for promoting the application of nano - electromechanical systems.

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