Abstract:Many kinds of two-dimensional (2D) van der Waals (vdW) have been demonstrated to exhibit electromechanical coupling effects, which makes them promising candidates for next-generation devices, such as piezotronics and nanogenerators. Recently, flexoelectricity was found to account for the out-of-plane electromechanical coupling in many 2D transition metal dichalcogenides (TMDs) who only exhibit in-plane piezoelectricity. However, low dimensional vdW three-dimensional (3D) topological insulators (TIs) have been overlooked regarding their electromechanical properties. In this study, for the first time, we experimentally investigate the electromechanical coupling of low dimensional 3D TIs with a centrosymmetric crystal structure, where a binary compound, bismuth selenite (Bi2Se3), is taken as an example. The results of piezoresponse force microscope (PFM) tests on the Bi2Se3 nanoflakes show that the material exhibits both out-of-plane and in-plane electromechanical responses. The Bi2Se3 nanoflake with a thickness of 37 nm possesses an effective out-of-plane piezoelectric coefficient of ~0.65 pm V-1. With careful analyses, the electromechanical responses are verified to arise from the converse flexoelectricity. The measured effective out-of-plane piezoelectric coefficient is mainly contributed by flexoelectric coefficient, {\mu}_39, which is estimated to be approximately 0.13 nC m-1. However, it is rather difficult to obtain the in-plane component of the flexoelectric tensor from the in-plane PFM measurements since the direction of the in-plane stress is always not normal to the AFM cantilever axis. The results provide useful guidance for understanding the flexoelectric effect of low dimensional vdW materials with centrosymmetric crystal structures. Moreover, the work can pave to way to explore the electromechanical devices based on the flexoelectricity of vdW TIs.

Enhanced flexoelectricity at reduced dimensions revealed by mechanically tunable quantum tunnelling

Directly Observing the Evolution of Flexoelectricity at the Tip of Nanocracks

Flexoelectric control of physical properties by atomic force microscopy

Atomic-Scale Tunable Flexoelectric Couplings in Oxide Multiferroics

Surface control of flexoelectricity

Flexoelectricity Modulated Electron Transport of 2D Indium Oxide

Strain-tunable Magnetism at Oxide Domain Walls

Size-dependent electromechanical properties in piezoelectric superlattices due to flexoelectric effect

Controllable Semiconductor Flexoelectricity by Interface Engineering

Engineering of Atomic-Scale Flexoelectricity at Grain Boundaries

Revealing Strong Flexoelectricity and Optoelectronic Coupling in 2D Ferroelectric CuInP2S6 Via Large Strain Gradient

Flexible Amorphous Superconducting Materials and Quantum Devices with Unexpected Tunability

Flexoelectric Effect in Thin Films: Theory and Applications

Tunable Flexoelectricity of Elastomers

Measuring direct flexoelectricity at the nanoscale

Flexoelectronics of Centrosymmetric Semiconductors

Dislocation-induced flexoelectricity in SrTiO$_3$ nanostructure from first principles

Controlled manipulation of oxygen vacancies using nanoscale flexoelectricity

Mechanical Tunability of Flexoelectricity in Elastomers

Giant Flexoelectric Response Via Mechanical and Material Design in Elastomers

Converse Flexoelectricity of Low-Dimensional Bismuth Selenite (Bi2Se3) Revealed by Piezoresponse Force Microscopy (PFM)