Direct and converse flexoelectricity in two-dimensional materials

Matteo Springolo,Miquel Royo,Massimiliano Stengel

DOI: https://doi.org/10.1103/PhysRevLett.127.216801

2021-10-15

Abstract:Building on recent developments in electronic-structure methods, we define and calculate the flexoelectric response of two-dimensional (2D) materials fully from first principles. In particular, we show that the open-circuit voltage response to a flexural deformation is a fundamental linear-response property of the crystal that can be calculated within the primitive unit cell of the flat configuration. Applications to graphene, silicene, phosphorene, BN and transition-metal dichalcogenide monolayers reveal that two distinct contributions exist, respectively of purely electronic and lattice-mediated nature. Within the former, we identify a key $metric$ term, consisting in the quadrupolar moment of the unperturbed charge density. We propose a simple continuum model to connect our findings with the available experimental measurements of the converse flexoelectric effect.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to define and calculate the direct and inverse flexoelectric effects in two - dimensional materials. Specifically, the authors focus on how to calculate the open - circuit voltage response (i.e., flexoelectric voltage) of two - dimensional materials under bending deformation from first - principles, which is considered a fundamental linear response characteristic of crystals. The paper points out that traditional methods for calculating flexoelectric coefficients have some limitations, such as the inconsistency of calculation results and the uncertainty of the relationship with experimental parameters. Therefore, the authors propose a new method to overcome these limitations, especially by defining the flexoelectric voltage coefficient \(\phi\) to describe this response, and this coefficient can be calculated using the original 2D unit cell of the undeformed layer.

The paper also explores how to relate the results of theoretical calculations to the experimentally measured inverse flexoelectric effect, especially the effect observed in two - dimensional materials on the support layer. The authors achieve this by establishing a simple continuum model, which can predict the flexoelectric voltage of different materials and help to explain experimental data. In addition, the paper also analyzes the flexoelectric responses in different materials (such as graphene, silicene, phosphorene, boron nitride, and monolayer transition - metal dichalcogenides), revealing two different contribution mechanisms, namely pure electronic properties and lattice - mediated properties.

In summary, this research aims to provide a more reliable method to understand and quantify the flexoelectric effect in two - dimensional materials, thereby promoting the application of these materials in new electromechanical devices, such as sensors or energy harvesters.