Terahertz radiation driven nonlinear transport phenomena in two-dimensional tellurene

Erwin Mönch,Mariya D. Moldavskaya,Leonid E. Golub,Vasily V. Bel'kov,Jörg Wunderlich,Dieter Weiss,Joanna Gumenjuk-Sichevska,Chang Niu,Peide D. Ye,Sergey D. Ganichev
2024-10-23
Abstract:Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity, polarization orientation as well as polarization independent current are found. We show that these contributions can be modified by the magnitude of the external gate potential. We demonstrate that this terahertz-driven electric current arises from the Berry curvature dipole and the side-jump microscopic <a class="link-external link-http" href="http://mechanisms.Nonlinear" rel="external noopener nofollow">this http URL</a> electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's electric field, is observed. Contributions sensitive to radiation helicity, polarization orientation as well as polarization independent current are found. We show that these contributions can be modified by the magnitude of the external gate potential. We demonstrate that this terahertz-driven electric current arises from the Berry curvature dipole and the side-jump microscopic mechanisms.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the nonlinear transport phenomena in two - dimensional tellurene driven by terahertz (THz) radiation at room temperature. Specifically, the paper aims to explore the following aspects: 1. **Mechanism of nonlinear current generation**: Through experimental observations, the paper found that when polarized terahertz radiation is applied, a direct - current (DC) current proportional to the square of the radiation electric field is generated in tellurene. This current includes components sensitive to the circular polarization of the radiation, components sensitive to the direction of linear polarization, and components independent of polarization. 2. **Analysis of microscopic mechanisms**: The paper further explored the microscopic origins of these nonlinear currents, attributing them to two main mechanisms resulting from the low - spatial symmetry of tellurene: - **Berry curvature dipole (BCD)**: This is an intrinsic mechanism caused by the Berry curvature in momentum space. - **Side - jump effect**: This is an extrinsic mechanism, which is the displacement of the electron wave packet during the momentum - scattering process. 3. **Effect of external gate voltage**: The paper also studied the effect of the external gate voltage on these nonlinear currents and found that the gate voltage can adjust the magnitude and direction of these currents. ### Formula Summary The main formulas involved in the paper are as follows: - Relationship between the DC current \( j_\alpha \) and the electric field \( E \): \[ j_\alpha = \sigma^{(1)}_{\alpha\mu} E_\mu + \sigma^{(2)}_{\alpha\mu\nu} E_\mu E_\nu \] where \( \sigma^{(1)} \) and \( \sigma^{(2)} \) are the linear and nonlinear conductivity tensors, respectively. - Expression of the DC current at high frequencies: \[ j_\alpha = \chi_{\alpha\mu\nu} (E_\mu E^*_\nu + E^*_\mu E_\nu) + \gamma_{\alpha\mu} i [E \times E^*]_\mu \] where \( \chi \) and \( \gamma \) are the third - order and second - order tensors, respectively. - Polarization dependence of the photocurrent: \[ J_{x,y} = J_{x,y}^{\text{circ}} \sin(2\phi) + J_{x,y}^0 + J_{x,y}^{L1} \cos(4\phi) + \frac{1}{2} J_{x,y}^{L2} \sin(4\phi) \] where \( J_{x,y}^{\text{circ}} \) is the amplitude of the circularly - polarized photocurrent, \( J_{x,y}^0 \) is the contribution independent of polarization, and \( J_{x,y}^{L1} \) and \( J_{x,y}^{L2} \) are the amplitudes of the linearly - polarized photocurrent. ### Conclusion Through the above research, the paper revealed the nonlinear transport phenomena induced by terahertz radiation in two - dimensional tellurene and analyzed in detail the physical mechanisms behind them. These findings not only help to understand the nonlinear electronic behavior in tellurene but also provide a theoretical basis for the development of new optoelectronic devices based on tellurene.