Photocurrents in bulk tellurium

M. D. Moldavskaya,L. E. Golub,S. N. Danilov,V. V. Bel'kov,D. Weiss,S. D. Ganichev

2023-12-06

Abstract:We report a comprehensive study of polarized infrared/terahertz photocurrents in bulk tellurium crystals. We observe different photocurrent contributions and show that, depending on the experimental conditions, they are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field induced linear and circular photogalvanic effects. All observed photocurrents have not been reported before and are well explained by the developed phenomenological and microscopic theory. We show that the effects can be unambiguously distinguished by studying the polarization, magnetic field, and radiation frequency dependence of the photocurrent. At frequencies around 30 THz, the photocurrents are shown to be caused by the direct optical transitions between subbands in the valence band. At lower frequencies of 1 to 3 THz, used in our experiment, these transitions become impossible and the detected photocurrents are caused by the indirect optical transitions (Drude-like radiation absorption).

Mesoscale and Nanoscale Physics,Materials Science,Quantum Physics

What problem does this paper attempt to address?

The paper aims to study the phenomenon of polarized infrared/terahertz photocurrent in tellurium (Te) crystals. Specifically, the paper addresses the following aspects:

1. **Observation of New Photocurrent Effects**:
- The paper reports the observation of different photocurrent contributions in Te crystals and demonstrates that these photocurrents are caused by the trigonal photogalvanic effect, the transverse linear photon drag effect, and the magnetic field-induced linear and circular photogalvanic effects.

2. **Theoretical Explanation**:
- Researchers have provided a reasonable explanation for all observed photocurrent phenomena through the development of phenomenological and microscopic theories, and they are able to clearly distinguish these effects.

3. **Frequency Dependence**:
- At frequencies around 30 THz, the photocurrent is caused by direct optical transitions within the valence band. At lower frequencies of 1 to 3 THz, these direct transitions become impossible, and the detected photocurrent is caused by indirect optical transitions (Drude-like radiation absorption).

Through these studies, the paper reveals some previously undiscovered photocurrent phenomena in Te crystals and provides a detailed discussion of their physical mechanisms.