Quantized Ballistic Transport of Electrons and Electron Pairs in LaAlO3/SrTiO3 Nanowires
Anil Annadi,Guanglei Cheng,Hyungwoo Lee,Jung-Woo Lee,Shicheng Lu,Anthony Tylan-Tyler,Megan Briggeman,Michelle Tomczyk,Mengchen Huang,David Pekker,Chang-Beom Eom,Patrick Irvin,Jeremy Levy
DOI: https://doi.org/10.1021/acs.nanolett.8b01614
IF: 10.8
2018-01-01
Nano Letters
Abstract:SrTiO3-based heterointerfaces support quasi-two-dimensional (2D) electron systems that are analogous to III-V semiconductor heterostructures, but also possess superconducting, magnetic, spintronic, ferroelectric, and ferroelastic degrees of freedom. Despite these rich properties, the relatively low mobilities of 2D complex-oxide interfaces appear to preclude ballistic transport in 1D. Here we show that the 2D LaAlO3/SrTiO3 interface can support quantized ballistic transport of electrons and (nonsuperconducting) electron pairs within quasi-1D structures that are created using a well-established conductive atomic-force microscope (c-AFM) lithography technique. The nature of transport ranges from truly single-mode (1D) to three-dimensional (3D), depending on the applied magnetic field and gate voltage. Quantization of the lowest e2/ h plateau indicate a ballistic mean-free path lMF ∼ 20 μm, more than 2 orders of magnitude larger than for 2D LaAlO3/SrTiO3 heterostructures. Nonsuperconducting electron pairs are found to be stable in magnetic fields as high as B = 11 T and propagate ballistically with conductance quantized at 2 e2/ h. Theories of one-dimensional (1D) transport of interacting electron systems depend crucially on the sign of the electron-electron interaction, which may help explain the highly ballistic transport behavior. The 1D geometry yields new insights into the electronic structure of the LaAlO3/SrTiO3 system and offers a new platform for the study of strongly interacting 1D electronic systems.