Electrical detection in two-terminal perpendicularly magnetized devices via geometric anomalous Nernst effect

Jiuming Liu,Bin Rong,Hua Bai,Xinqi Liu,Yanghui Liu,Yifan Zhang,Yujie Xiao,Yuzhen Liang,Qi Yao,Liyang Liao,Yumeng Yang,Cheng Song,Xufeng Kou

2024-09-15

Abstract:The non-uniform current distribution arisen from either current crowding effect or hot spot effect provides a method to tailor the interaction between thermal gradient and electron transport in magnetically ordered systems. Here we apply the device structural engineering to realize an in-plane inhomogeneous temperature distribution within the conduction channel, and the resulting geometric anomalous Nernst effect (GANE) gives rise to a non-zero 2nd -harmonic resistance whose polarity corresponds to the out-of-plane magnetization of Co/Pt multi-layer thin film, and its amplitude is linearly proportional to the applied current. By optimizing the aspect ratio of convex-shaped device, the effective temperature gradient can reach up to 0.3 K/$\mu$m along the y-direction, leading to a GANE signal of 28.3 $\mu$V. Moreover, we demonstrate electrical write and read operations in the perpendicularly-magnetized Co/Pt-based spin-orbit torque device with a simple two-terminal structure. Our results unveil a new pathway to utilize thermoelectric effects for constructing high-density magnetic memories

Mesoscale and Nanoscale Physics,Applied Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve an efficient electrical detection method in vertically magnetized Co/Pt multilayer thin - film devices. Specifically, the authors proposed and demonstrated the detection of out - of - plane magnetization states through the Geometric Anomalous Nernst Effect (GANE). This method utilizes the in - plane temperature gradient caused by the non - uniform current distribution, thereby generating a non - zero second - harmonic resistance signal related to the vertical magnetization direction. This method can not only effectively read out the vertical magnetization information, but also can achieve electrical write and read operations in a simple two - terminal structure, providing a new approach for constructing high - density magnetic memories.

### Key points:
1. **Problem background**:
- Efficient detection of magnetic moments is crucial for the development of spintronic logic memories and sensor applications.
- Common magnetoelectric effects such as Anisotropic Magnetoresistance (AMR), Anomalous Hall Effect (AHE) and Giant Magnetoresistance (GMR) have been widely used in the detection of magnetic information.
- Second - order non - reciprocal electrical responses such as Unidirectional Spin Hall Magnetoresistance (USMR) and Anomalous Nernst Effect (ANE) are also used to read magnet - related information.

2. **Research objectives**:
- To achieve electrical detection in vertically magnetized Co/Pt multilayer thin films.
- To utilize the Geometric Anomalous Nernst Effect (GANE) to achieve electrical write and read operations in a two - terminal structure.
- To optimize the device structure to enhance the GANE signal and improve the detection efficiency.

3. **Main contributions**:
- Proposed the concept of Geometric Anomalous Nernst Effect (GANE) and verified its feasibility through experiments.
- By optimizing the structural parameters of the convex - shaped device, a significant GANE signal was achieved.
- Successfully demonstrated the electrical write and read operations of a two - terminal Spin - Orbit Torque (SOT) device based on GANE at room temperature.

### Formula explanations:
- **Anomalous Nernst Effect (ANE)**:
\[
\mathbf{E}_{\text{ANE}} = S \cdot \mathbf{m}_0 \times \nabla T
\]
where \( S \) is the ANE coefficient, \( \mathbf{m}_0 \) is the magnetization unit vector, and \( \nabla T \) is the temperature gradient.

- **Second - harmonic resistance**:
\[
R_{2\omega}^{\text{ANE}} = \frac{V_{2\omega}^{\text{ANE}}}{I_0} = E_{2\omega}^{\text{ANE}} \cdot L_0 / I_0 \propto I_0
\]
where \( V_{2\omega}^{\text{ANE}} \) is the second - harmonic voltage, \( I_0 \) is the input current, and \( L_0 \) is the channel length.

- **Effective temperature gradient**:
\[
(\nabla_y T)_{\text{eff}} = \frac{1}{L_0 W_0} \int_0^{L_0} \int_0^{W_0} \nabla_y T \, dx \, dy
\]
where \( L_0 \) and \( W_0 \) are the length and width of the channel respectively.

Through these methods and formulas, the authors successfully demonstrated how to use GANE to achieve efficient electrical detection and operations in vertically magnetized Co/Pt multilayer thin - film devices.