Abstract:Artificial neural networks (ANNs), inspired by the structure and function of the human brain, have achieved remarkable success in various fields. However, ANNs implemented using conventional complementary metal oxide semiconductor technology face significant limitations. This has prompted exploration of nonvolatile memory technologies as potential solutions to overcome these limitations by integrating storage and computation within a single device. These emerging technologies can retain resistance values without power, allowing them to serve as analog weights in ANNs, mimicking the behavior of biological synapses. While promising, these nonvolatile devices often exhibit inherent nonlinear relationships between resistance and applied voltage, complicating training processes and potentially impacting learning accuracy. This article proposes a magnetic synapse device based on the spin–orbit torque effect with geometrically controlled linear and nonlinear response characteristics. The device consists of a magnetic multilayer stack patterned into a designed shape, where the width variation along the current flow direction allows for controllable magnetic domain wall propagation. Through finite element method simulations and experimental studies, we demonstrate that by engineering the device geometry, a linear relationship between the applied current and the resulting Hall resistance can be achieved, mimicking the desired linear weight-input behavior in artificial neural networks. Additionally, this study explores the influence of current pulse width on the response curves, revealing a deviation from linearity at longer pulse durations. The geometric tunability of the magnetic synapse device offers a promising approach for realizing reliable and energy-efficient neuromorphic computing architectures.

Spike-timing-dependent-plasticity learning in a planar magnetic domain wall artificial synapsis

Intrinsic Spike Timing Dependent Plasticity in Stochastic Magnetic Tunnel Junctions Mediated by Heat Dynamics

Tunable Spike-Timing-Dependent Plasticity in Magnetic Skyrmion Manipulation Chambers

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Learning Through Ferroelectric Domain Dynamics in Solid-State Synapses

Voltage-dependent plasticity of spin-polarized conductance in phenyl-based single-molecule magnetic tunnel junctions

Spin-Transfer Torque Magnetic Memory As a Stochastic Memristive Synapse for Neuromorphic Systems

Solid-State Synapse Based on Magnetoelectrically Coupled Memristor.

Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores

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Realization of Diverse Spike-timing-dependent Plasticity with Nanosecond Timescale Based on Metal Oxide Resistive Switching Memory

Nociceptor‐Enhanced Spike‐Timing‐Dependent Plasticity in Memristor with Coexistence of Filamentary and Non‐Filamentary Switching

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Diverse Spike-Timing-dependent Plasticity Based on Multilevel HfO X Memristor for Neuromorphic Computing

Bi-sigmoid spike-timing dependent plasticity learning rule for magnetic tunnel junction-based SNN