Electrical control of topological 3Q state in an intercalated van der Waals antiferromagnet

Junghyun Kim,Kaixuan Zhang,Pyeongjae Park,Woonghee Cho,Hyuncheol Kim,Je-Geun Park

2024-09-04

Abstract:Van der Waals (vdW) magnets have opened a new avenue of novel opportunities covering various interesting phases. Co1/3TaS2-an intercalated metallic vdW antiferromagnet-is one of the latest important additions to the growing list of materials due to its unique triple-Q (3Q) ground state possessing topological characteristics. Careful bulk characterisations have shown the ground state of CoxTaS2 to be a rare 3Q tetrahedral structure for x less than 1/3. The uniqueness of this ground state arises from the dense real-space Berry curvature due to scalar spin chirality, giving rise to a noticeable anomalous Hall effect. In this work, we demonstrate that we can control this topological phase via gating. Using three kinds of CoxTaS2 devices with different Co compositions, we have established that we can cover the whole 3Q topological phase with ionic gating. This work reports a rare demonstration of electrical gating control of layered antiferromagnetic metal. More importantly, our work constitutes one of the first examples of the electrical control of the scalar spin chirality using antiferromagnetic metal.

Materials Science,Mesoscale and Nanoscale Physics,Strongly Correlated Electrons,Applied Physics,Quantum Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to control the topological 3Q state in Co - TaS2 through electrical gating techniques. Specifically, the researchers hope to use ion - gating techniques to regulate the electron density in the Co - TaS2 material, thereby achieving control over its topological 3Q magnetic structure. This 3Q state is a triple - Q (3Q) ground state with unique topological properties, existing in intercalated van der Waals antiferromagnetic metals. This study shows how to modulate the electron density of the material by changing the gate voltage, which in turn affects its topological phase transition, especially the presence or absence of the 3Q state and the changes in its properties.

### Research Background
- **Material Properties**: Co - TaS2 is an intercalated van der Waals antiferromagnetic metal with a unique 3Q ground state, which consists of four non - coplanar spin configurations, forming a regular tetrahedron structure.
- **Topological Properties**: The 3Q state has a significant scalar spin chirality, which leads to an observable anomalous Hall effect (AHE), and this effect can also occur without relativistic spin - orbit coupling (SOC).
- **Experimental Challenges**: Traditional chemical doping methods are difficult to precisely control the electron density, while ion - gating techniques provide a more precise method to modulate the electron density and thus control the topological phase.

### Research Objectives
- **Electrical Control**: Through ion - gating techniques, the researchers hope to achieve electrical control of the 3Q state in Co - TaS2.
- **Phase - Transition Mechanism**: Explore how the 3Q state of the material responds to changes in the gate voltage at different Co concentrations, especially the behavior near the phase boundary.
- **Physical Mechanism**: Reveal how changes in electron density affect the stability of the 3Q state, especially by adjusting the Fermi - surface geometry to control the topological phase.

### Experimental Methods
- **Sample Preparation**: Prepare high - quality single - crystal Co - TaS2 by chemical vapor transport (CVT) method.
- **Gating Device**: Make the Co - TaS2 nanosheet into a gating device and use lithium - based solid - state electrolyte for ion - gating experiments.
- **Measurement Method**: Observe the changes in the electrical properties of the material under different gate voltages through the measurement of longitudinal resistance and transverse Hall resistance.

### Main Findings
- **Electron - Density Regulation**: By applying positive and negative gate voltages, the electron density in Co - TaS2 can be effectively modulated, thus affecting the stability of the 3Q state.
- **Topological Phase - Transition**: For samples with different Co concentrations, the gating experiments show different behaviors:
- For samples with a lower Co concentration (such as Co0.299TaS2), the positive gate voltage enhances the 3Q state, while the negative gate voltage weakens it.
- For samples with a moderate Co concentration (such as Co0.319TaS2), the 3Q state is relatively stable and less affected by the gate voltage.
- For samples close to the phase boundary (such as Co0.327TaS2), the positive gate voltage significantly weakens the 3Q state.
- **Physical Mechanism**: These results indicate that the stability of the 3Q state is closely related to the geometric structure of the Fermi - surface, especially the Fermi - surface near 3/4 filling.

### Conclusion
This study successfully demonstrates the electrical control of the 3Q state in Co - TaS2 through ion - gating techniques and reveals the mechanism of how electron - density changes affect topological phase - transition. This achievement not only provides a new perspective for understanding topological magnetic materials but also provides potential technical means for future topological quantum - device design.