Visualization of ferromagnetic domains in vanadium-doped topological insulator thin films and heterostructures

Ying-Jie Ma,Ti-Rui Xia,Wen-Bo Wang
DOI: https://doi.org/10.1007/s42864-022-00140-x
2022-02-21
Tungsten
Abstract:Magnetically doped topological insulator (TI) thin films and related heterostructures have been extensively studied for years due to their exotic quantum transport properties and potential applications in low-dissipation electronic devices and quantum computation. The selection of magnetic dopants is crucial to realize a high-quality magnetic TI with a robust ferromagnetic ordering and a preserved topological band structure. In this paper, we briefly review the recent magnetic domain imaging works in vanadium-doped magnetic topological insulator thin films and heterostructures. Using cryogenic magnetic force microscopy and in situ transport measurements, a ferromagnetic domain behavior has been demonstrated in V-doped Sb2Te3 (ST) and Cr, V co-doped (Bi,Sb)2Te3 (BST) thin films. The direct visualization of long-range ferromagnetic ordering in a quantum anomalous Hall (QAH) system sheds light on enhancing the QAH temperature by improving the ferromagnetism. Taking advantage of the different coercivity of Cr- and V-doped BST films, an axion insulating state has been observed in Cr-doped BST/BST/V-doped BST sandwich heterostructures. The antiparallel magnetization alignment, which is the key ingredient for realization of axion insulating state, has been directly visualized via magnetic imaging at various magnetic fields. The V-doped ST/ST heterostructures also provide a platform for Berry phase engineering in momentum space. By suppressing the anomalous Hall effect in such heterostructures, an intrinsic topological Hall effect can be revealed, which resolved the long-term puzzle of the origin of THE in the ultrathin ferromagnetic thin films and two-dimensional ferromagnets. The review of magnetic domain imaging in vanadium-doped topological insulators and heterostructures inspires further exploration of quantum transport properties in magnetic topological insulators and deepens the understanding of the interplay between the magnetic ordering and topological electronic band structures in magnetic TIs and beyond.
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