Abstract:Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when doping with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room-temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy:Bi2Te3 remained elusive. Here, we present an X-ray magnetic circular dichroism, polarized neutron reflectometry, muon spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition metal-doped layers. However, the introduction of some charge carriers by the dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these rare earth doped samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition metal doped topological insulators.

Molecular Beam Epitaxy Growth and Doping Modulation of Topological Semimetal NiTe$_2$

Molecular beam epitaxy growth and doping modulation of topological semimetal NiTe2

Magnetic and electrical transport study of the antiferromagnetic topological insulator Sn-doped MnBi 2 Te 4

Epitaxial Growth and Atomic-Scale Study of Type-Ii Dirac Semimetal 1T-Nite2 Film

Development of Ferromagnetism in the Doped Topological Insulatorbi2−xmnxte3

Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators

Intrinsic and extrinsic dopings in epitaxial films MnBi2Te4

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators (Ge$_{1-δ-x}$Mn$_x$)$_2$Bi$_2$Te$_5$ ($x\leq 0.47$, $0.11 \leq δ\leq 0.20$)

Fermi-crossing Type-II Dirac fermions and topological surface states in NiTe2

Topological Type-II Dirac Fermions Approaching the Fermi Level in a Transition Metal Dichalcogenide NiTe2

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Molecular Beam Epitaxy of Superconducting PdTe2 Films on Topological Insulator Bi2Te3

Exploring Native Atomic Defects in NiTe2

Topological Insulator Thin Films Of Bi2te3 With Controlled Electronic Structure

Epitaxial Growth and Structural Characterizations of MnBi2Te4 Thin Films in Nanoscale

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Investigating and Manipulating the Molecular Beam Epitaxy Growth Kinetics of Intrinsic Magnetic Topological Insulator MnBi2Te4 with in Situ Angle-Resolved Photoemission Spectroscopy

Controllable synthesis and tunable properties of topological material WTe<sub>2</sub>

Microscopic effects of Dy-doping in the topological insulator Bi2Te3

Ni-Intercalation-Induced Topological Nodal Line States and Superconductivity in NiTe