Abstract:The intrinsic antiferromagnetic topological insulator MnBi2Te4 and members of its family have been the subject of theoretical and experimental research, which has revealed the presence of a variety of defects and disorders that are crucial in determining the topological and magnetic properties. This also brings about challenges in realizing the quantum states like the quantum anomalous Hall and the axion insulator states. Here, utilizing cryogenic magnetoelectric transport and magnetic measurements, we systematically investigate the effects arising from intrinsic doping by antisite defects and extrinsic doping by Sb in MnBi2Te4 epitaxial films grown by molecular beam epitaxy. We demonstrate that the nonequilibrium condition in epitaxy allows a wide growth window for optimizing the crystalline quality and defect engineering. While the intrinsic antisite defects caused by the intermixing between Bi and Mn can be utilized to tune the Fermi level position as evidenced by a p-to-n conductivity transition, the extrinsic Sb-doping not only compensates for this doping effect but also modifies the magnetism and topology of the film, during which a topological phase transition is developed. Conflicting reports from the theoretical calculations and experimental measurements in bulk crystals versus epitaxial films are addressed, which highlights the intimate correlation between the magnetism and topology as well as the balance between the Fermi-level positioning and defect control. The present study provides an experimental support for the epitaxial growth of the intrinsic topological insulator and underlines that the topology, magnetism, and defect engineering should be revisited for enabling a steady and reliable film production.

Development of Ferromagnetism in the Doped Topological Insulatorbi2−xmnxte3

Ferromagnetism And Topological Surface States Of Manganese Doped Bi2te3: Insights From Density-Functional Calculations

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Magnetic and electrical transport study of the antiferromagnetic topological insulator Sn-doped MnBi 2 Te 4

Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$

Charge Carrier Mediation and Ferromagnetism Induced in MnBi6Te10 Magnetic Topological Insulators by Antimony Doping

Progress on the Antiferromagnetic Topological Insulator MnBi2Te4.

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators (Ge$_{1-δ-x}$Mn$_x$)$_2$Bi$_2$Te$_5$ ($x\leq 0.47$, $0.11 \leq δ\leq 0.20$)

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy

Ferromagnetic MnBi4Te7 obtained with low concentration Sb doping: A promising platform for exploring topological quantum states

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

Progress on the antiferromagnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Intrinsic and extrinsic dopings in epitaxial films MnBi<sub>2</sub>Te<sub>4</sub>

Observation of Magnetism Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films

High-temperature magnetically topological candidate material Mn3Bi2Te6

Single crystal growth, chemical defects, magnetic and transport properties of antiferromagnetic topological insulators

Intrinsic and extrinsic dopings in epitaxial films MnBi2Te4