Abstract:Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to the great success in realizing exotic topological quantum states, such as the quantum anomalous Hall effect, the axion insulator state, and high-Chern-number and high-temperature Chern insulator (CI) states. One key issue in this field is to effectively manipulate these states and control topological phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. Specifically, as the magnetic field is tilted away from the out-of-plane direction by similar to 40-60 degrees, the Hall resistance deviates from the quantization value, and a colossal, anisotropic magnetoresistance is detected. Theoretical analyses based on modified Landauer-Buttiker formalism show that the field-tilt-driven switching from the ferromagnetic state to the canted antiferromagnetic state induces a topological quantum phase transition from CI to magnetic insulator with gapped Dirac surface states in MnBi2Te4 devices. These findings reveal a kind of topological phase transition associated with magnetism and spin-orbit coupling. In this letter, we suggest that MnBi2Te4 is an ideal platform for exploring topological quantum phase transitions, and it provides an efficient means for modulating topological quantum states and topological quantum phase transitions.

High-temperature magnetically topological candidate material Mn3Bi2Te6

Possible high-temperature magnetically topological material Mn$_{3}$Bi$_{2}$Te$_{6}$

Exploration of intrinsic magnetic topological insulators in multiple-MnTe-intercalated topological insulator Bi2Te3

Pursuing High-Temperature Quantum Anomalous Hall Effect in MnBi$_2$Te$_4$/Sb$_2$Te$_3$ Heterostructures

Crystal and magnetic structures of magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Antiferromagnetic Topological Insulator MnBi2Te4: Synthesis and Magnetic Properties.

Progress on the Antiferromagnetic Topological Insulator MnBi2Te4.

Intrinsic Topological Phases in Mn2Bi2Te5 Tuned by the Layer Magnetization

Progress on the antiferromagnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Magnetic topological insulator MnBi 6 Te 10 with a zero-field ferromagnetic state and gapped Dirac surface states

MnBi 2 Te 4 -Family Intrinsic Magnetic Topological Materials

Multiple Magnetic Topological Phases in Bulk van der Waals Crystal MnSb 4 Te 7

Observation of Magnetism Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Intrinsic and tunable quantum anomalous Hall effect and magnetic topological phases in XYBi2Te5

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Ferromagnetic-antiferromagnetic coexisting ground state and exchange bias effects in MnBi4Te7 and MnBi6Te10

Toward 2D Magnets in the (MnBi2 Te4 )(Bi2 Te3 )n Bulk Crystal