Abstract:The recently discovered magnetic topological insulator of $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$, has been successfully used to explore emerging physical phenomena, such as the quantum anomalous Hall effect (QAHE) and axion insulator state. Based on first-principles calculations, we have systematically investigated the electronic, magnetic, and topological properties of layered $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}, \mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$, and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$, where those materials host similar crystal structure as the $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$. Our calculations first show that each bulk system with antiferromagnetic order can be converted into a three-dimensional topologically nontrivial insulator by applying appropriate pressure. Then, we find that ferromagnetic (FM) $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}$ is a type II Weyl semimetal with a single pair of Weyl points near Fermi level. Specifically, FM $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$ and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$ can be readily converted into Weyl semimetals under pressure. Furthermore, we notice that QAHE can also be achieved in layered FM $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}$ and $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$. All those findings demonstrate that the $\mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Te}}_{4}$-like materials of $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Te}}_{4}, \mathrm{Mn}{\mathrm{Bi}}_{2}{\mathrm{Se}}_{4}$, and $\mathrm{Mn}{\mathrm{Sb}}_{2}{\mathrm{Se}}_{4}$ are promising candidates to explore intriguing topological quantum states.

Possible high-temperature magnetically topological material Mn$_{3}$Bi$_{2}$Te$_{6}$

High-temperature magnetically topological candidate material Mn3Bi2Te6

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Exploration of intrinsic magnetic topological insulators in multiple-MnTe-intercalated topological insulator Bi2Te3

Antiferromagnetic Topological Insulator MnBi2Te4: Synthesis and Magnetic Properties.

Magnetization-tuned topological quantum phase transition in MnBi<sub>2</sub>Te<sub>4</sub> devices

Progress on the antiferromagnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>

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Delicate Ferromagnetism in MnBi$_6$Te$_{10}$

Progress on the Antiferromagnetic Topological Insulator MnBi2Te4.

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Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

The modulation of magnetism and charge carrier in magnetic topological insulator MnBi4Te7 by Pb and Sb co-doping

Infrared electrodynamics and ferromagnetism in the topological semiconductors Bi$_2$Te$_3$ and Mn-doped Bi$_2$Te$_3$

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

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Tunable Topological States in Layered Magnetic Materials of MnSb2Te4, MnBi2Se4 , And