Abstract:Author(s): Chen, Jen-Ru | Advisor(s): Krivorotov, Ilya N | Abstract: Spin Hall effect in a heavy metal (HM) generates a pure spin current flowing perpendicular to an applied electric charge current. When injected into a ferromagnet (FM), this pure spin current can act as negative magnetic damping thereby exciting self-oscillations of magnetization. In a simple HM/FM bilayer geometry, the current-driven self-oscillations of magnetization result in a microwave voltage generation due to anisotropic magneto-resistance (AMR) of the FM. Since AMR in thin films of typical FM materials such as Permalloy (Py) is relatively small, the output microwave signal generated by the HM/FM bilayer spin Hall oscillators (SHOs) is typically limited to ~ 0.1 nW. In this thesis, a new type of SHO by replacing FM layer with spin valve multilayers. In this type of devices, the microwave power generation relies on current-in-plane (CIP) giant magneto-resistance (GMR) instead of AMR. Since the magnitude GMR typically exceeds that of AMR, this new type of SHO can generate significantly higher power than the AMR-based SHOs. The maximum microwave power generated by the device exceeds 1 nW, which is over an order of magnitude higher than that in HM/FM bilayer SHO nanowire devices.Spin Transfer Torque Random Access Memory (STT-RAM) is a promising non-volatile memory technology that offers scalable area, fast operation, and low power consumption advantages over traditional SRAM, DRAM, and flash memories. Performance of the STT-RAM sensitively depends on magnetic anisotropy and properties of the magnetic tunnel junctions (MTJs), which is the most essential part in STT-RAM. We present here the results on the effect of ionizing radiation on perpendicular-anisotropy MTJs (PMTJs). These samples were exposed to both gamma radiation and a mix of gamma and thermal neutron, using the TRIGA reactor. The studies were on TMR, the electrical transport measurements taken on the MTJ nanopillars, both before and after the irradiation. Our results match the previous study\cite{Jander2012}, in which no explicit changes on TMR curves of MTJs after the gamma and neutron irradiation. We also investigated the radiation effect on current switching TMR loop of PMTJs that no one reported before. To be confirmed robustness of MTJs statistically, more than 150 devices were investigated in this study.Non-local lateral devices have been extensively employed for studies of spin-dependent transport in a wide range of non-magnetic (NM) metals and semiconductors. In these devices, pure spin currents in non-magnetic channel materials can be generated and their propagation and decay can be electrically detected. We have successfully observed a non-local spin valve signal in a topological insulator (TI) channel material Sb$_2$Te$_3$. The characteristic property of TI, spin-momentum locking (SML), was identified. The spins of the TI Dirac surface state lies in-plane, and is locked at right angles to the electrons' momentum.

Thermal Effects on Damping Determination of Perpendicular MRAM Devices by Spin-Torque Ferromagnetic Resonance

Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories

Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers

Drag Effect Induced Large Anisotropic Damping Behavior in Magnetic Thin Films with Strong Magnetic Anisotropy

Spin-current Effect on Ferromagnetic Resonance in Patterned Magnetic Thin Film Structures

Effects of lateral device size and material properties on the ferromagnetic resonance response of spinwave eigen-modes in magnetic devices

Spin Torque and Spin-Dependent Transport in Nanoscale Devices

Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films

Damping Dependence of Spin-Torque Effects in Thermally Assisted Magnetization Reversal

Spin Transfer Torque Switching in Exchange-Coupled Amorphous GdFeCo/TbFe Bilayers for Thermally Assisted MRAM Application

Enhancement of Magnetization Damping Coefficient of Permalloy Thin Films with Dilute Nd Dopants

Impact of Off-Axis External Magnetic Field Perturbation on the Write Error Slopes of Perpendicular STT-RAM Cell: Micromagnetic Study

Impact of intergrain spin transfer torques due to huge thermal gradients on the performance of heat assisted magnetic recording

Thermally nucleated magnetic reversal in CoFeB/MgO nanodots

Giant nonlinear damping in nanoscale ferromagnets

Total Ionizing Dose Effects on TiN/Ti/HfO2/TiN Resistive Random-Access Memory Studied via Electrically Detected Magnetic Resonance

Thermal relaxation rates of magnetic nanoparticles in the presence of magnetic fields and spin-transfer effects

Mixed etching-oxidation process to enhance the performance of spin-transfer torque MRAM for high-performance computing

Mo-based perpendicularly magnetized thin films with low damping for fast and low-power consumption magnetic memory

Giant resonant nonlinear damping in nanoscale ferromagnets

Spin–orbit torques of an in-plane magnetized system modulated by the spin transport in the ferromagnetic Co layer