Andrey Babichev,Ivan Makhov,Natalia Kryzhanovskaya,Alexey Blokhin,Yuriy Zadiranov,Yulia Salii,Marina Kulagina,Mikhail Bobrov,Alexey Vasiliev,Sergey Blokhin,Nikolay Maleev,Maria Tchernycheva,Leonid Karachinsky,Innokenty Novikov,Anton Egorov
Abstract:A comprehensive numerical modelling of microcavity parameters for micropillar lasers with optical pumping was presented. The structure with a hybrid dielectric-semiconductor top mirror has a significantly higher calculated quality-factor (~65000 for 5 $\mu$m pillar) due to better vertical mode confinement. The minimum laser threshold (~370 $\mu$W for 5 $\mu$m pillar) coincided with a temperature of 130 K, which is close to zero gain to cavity detuning. Lasing up to 220 K was demonstrated with a laser threshold of about 2.2 mW.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is the performance optimization of Quantum - Dot Micropillar Lasers when operating at relatively high temperatures. Specifically, the authors focus on how to improve the micro - cavity design and material selection so that Quantum - Dot Micropillar Lasers can maintain effective laser emission at higher temperatures and reduce the laser threshold.
### Detailed Explanation:
1. **Background and Motivation**:
- Quantum - Dot Micropillar Lasers exhibit good performance at low temperatures, but their maximum laser temperature is usually limited to about 130 K [2].
- With the growth of application requirements, especially in fields such as photonic quantum information technology, free - space communication, integrated photonics, quantum nanophotonics, and neuromorphic computing, it is necessary to develop Quantum - Dot Micropillar Lasers that can work stably at higher temperatures.
2. **Research Objectives**:
- **Increasing the Operating Temperature**: By optimizing the micro - cavity structure and material selection, enable Quantum - Dot Micropillar Lasers to emit light effectively even at a temperature as high as 220 K.
- **Reducing the Laser Threshold**: By improving the design of the micro - cavity, especially by introducing a non - absorbing hybrid dielectric - semiconductor top mirror, significantly reduce the laser threshold.
3. **Key Findings**:
- **Q - factor Improvement**: After introducing the non - absorbing hybrid dielectric - semiconductor top mirror, the Q - factor of the 5 μm micropillar is significantly increased to about 65,000, much higher than that of the traditional semiconductor mirror.
- **Lowest Laser Threshold**: The lowest laser threshold occurs at around 130 K, approximately 370 μW, which is close to the zero - gain and cavity detuning point.
- **High - Temperature Performance**: Experiments show that even at a temperature of 220 K, the laser threshold is only about 2.2 mW, demonstrating good high - temperature stability.
4. **Technical Means**:
- **Numerical Simulation**: Use the finite - difference time - domain method (FDTD) for three - dimensional numerical simulation to optimize micro - cavity parameters such as Q - factor, mode volume, wavelength, and photon extraction efficiency.
- **Experimental Verification**: Prepare samples by molecular beam epitaxy (MBE) and measure characteristics such as laser threshold and spectral linewidth at different temperatures to verify the theoretical predictions.
In conclusion, this paper successfully realizes the efficient operation of Quantum - Dot Micropillar Lasers at relatively high temperatures through optimizing the micro - cavity design and material selection, providing important support for the future use of these devices in a wider range of application scenarios.