Abstract:It was experimentally reported that light illumination leads to reduced deformation stresses in some III-V compound semiconductors such as GaP. This phenomenon is known as the negative photoplastic effect, which is expected to originate from interactions between photoexcited carriers and glide dislocations. To clarify its physical origin at the atomic and electronic levels, density-functional-theory calculations were performed for Shockley 30∘ partial dislocations in GaP. In the absence of excess carriers, both Ga and P cores of the partial dislocations were found to have reconstructed structures that are energetically most stable. This can be understood by the fact that dangling-bond-like states at undercoordinated atoms of the dislocation cores are removed by core reconstruction. In the presence of excess carriers that would be formed by light illumination, the reconstructed Ga and P cores were able to trap excess holes and electrons, respectively, and were subsequently transformed to unreconstructed structures. It was also found that the unreconstructed structures due to excess carriers tend to have smaller potential barrier heights for dislocation glide, as compared to the pristine reconstructed structures without any excess carriers. This is in good agreement with the increased dislocation mobility in GaP under external light illumination that has been experimentally reported. https://doi.org/10.1103/PhysRevMaterials.8.093605 ©2024 American Physical Society

The Origin of Photoplasticity in ZnS

Light Irradiation Induced Brittle-to-ductile and Ductile-to-brittle Transition in Inorganic Semiconductors

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Anisotropic Plastic Deformation Mechanism and Indentation Size Effect During Berkovich Nanoindentation Process of ZnSe Crystals in Micro-nanoscale

Thermodynamic Instability of Znse/Zns Core/Shell Quantum Dots

Scintillation and Luminescence in Transparent Colorless Single and Polycrystalline Bulk Ceramic ZnS

Extrinsic size dependent plastic deformability of ZnS micropillars

Defect energy levels and persistent luminescence in Cu-doped ZnS

Photoelasticy Method for Study of Structural Imperfection of Zngep2 Crystals

Origin of Plasticity in Nanostructured Silicon

OPTICAL PROPERTIES OF ZnS X Te 1 X MIXED CRYSTALS

Influence of Morphology on Blinking Mechanisms and Excitonic Fine Structure of Single Colloidal Nanoplatelets

Defect related photoluminescence and EPR study of sintered polycrystalline ZnO

Photoluminescence of Zns : Mn Embedded in Three-Dimensional Photonic Crystals of Submicron Polymer Spheres

Atomic-structure changes of partial-dislocation cores due to excess carriers in GaP

Photo-instability of CdSe/ZnS Quantum Dots in Poly(methylmethacrylate) Film

Prismatic-to-basal plastic slip transition in zirconium

Determination of the Discreteness Correction in Dislocation Equations for Sphalerite Crystals

Interfacial Triboelectricity Lights Up Phosphor‐Polymer Elastic Composites: Unraveling the Mechanism of Mechanoluminescence in Zinc Sulfide Microparticle‐Embedded Polydimethylsiloxane Films (Small 17/2024)

Stress-dependent Dislocation Core Structures Leading to Non-Schmid Behavior

New energy with ZnS: novel applications for a standard transparent compound