Stability of monodomain III-V crystals and antiphase boundaries over a Si monoatomic step

D. Gupta,S. Pallikkara Chandrasekharan,S. Thébaud,C. Cornet,L. Pedesseau

2024-06-13

Abstract:Here, we compare the stabilities of different III-V crystals configurations on stepped Si substrates, with or without anti-phase boundaries, for abrupt and compensated interfaces, using density functional theory. Thermodynamic stability of the different heterostructures is analyzed with an atomic scale description of charge densities distribution and mechani-cal strain. We show that the configuration where a III-V crystal adapts to a Si monoatomic step through change of charge compensation at the hetero-interface is much more stable than the configuration in which an antiphase boundary is formed. This study thus demonstrates that antiphase boundaries commonly observed in III-V/Si samples are not origi-nating from Si monoatomic step edges but from inevitable kinetically driven coalescence of monophase 3D III-V islands.

Materials Science,Applied Physics,Chemical Physics,Computational Physics

What problem does this paper attempt to address?

This paper attempts to address the issue of stability differences in different crystal configurations (including or excluding antiphase boundaries) when growing III-V semiconductors on silicon (Si) single atomic steps. Specifically, the authors compare the effects of different interface configurations (abrupt interface and compensated interface) and the presence or absence of antiphase boundaries (APBs) on the thermodynamic stability of heterostructures through density functional theory (DFT) calculations.

### Main Research Questions:
1. **Stability of Different Interface Configurations**:
- The stability difference between abrupt interfaces and compensated interfaces.
- The stability difference with or without the presence of antiphase boundaries (APBs).

2. **Mechanism of Antiphase Boundary Formation**:
- Whether antiphase boundaries are caused by silicon single atomic steps or by the non-equilibrium phase transition of III-V single crystal islands.
- The formation process of antiphase boundaries and their impact on material properties.

### Research Background:
- In recent years, the heteroepitaxial growth of III-V semiconductors on silicon has attracted widespread attention due to its potential in photonics and energy applications.
- Crystal defects, especially antiphase boundaries (APBs), generated in the early growth stages, significantly impact device performance.
- The traditional view is that antiphase boundaries are caused by single atomic steps on the silicon surface, but this view has been questioned in recent years.

### Research Methods:
- First-principles calculations using density functional theory (DFT) to simulate different III-V/Si heterostructures.
- Comparison of four different heterostructure configurations:
- Abrupt interface with antiphase boundaries (wAPBs_ab)
- Compensated interface with antiphase boundaries (wAPBs_comp)
- Abrupt interface without antiphase boundaries (w/oAPBs_ab)
- Compensated interface without antiphase boundaries (w/oAPBs_comp)

### Research Results:
- **Energy Analysis**:
- Compensated interfaces are more stable than abrupt interfaces.
- Configurations without antiphase boundaries are more stable than those with antiphase boundaries.
- **Charge Distribution and Mechanical Properties**:
- Compensated interfaces can better balance charges, reducing electric field inhomogeneity.
- Antiphase boundaries cause local mechanical strain, affecting material stability.

### Conclusion:
- Antiphase boundaries in III-V crystals are highly unstable features, typically forming only during the non-equilibrium phase transition of III-V single crystal islands.
- Silicon single atomic steps themselves do not directly cause the formation of antiphase boundaries but adapt to steps by changing interface compensation.
- This finding provides a new perspective for understanding the heteroepitaxial growth of III-V/IV materials, helping to better control defect generation in devices.

Through these studies, the authors hope to provide theoretical support for the high-quality growth of III-V semiconductors on silicon, thereby promoting the development of photonics and energy applications.