Abstract:In a recently developed methodology termed photon induced near-field electron microscopy (PINEM), the inelastic scattering of electrons off illuminated nanostructures provides direct experimental access to the structure of optical near-field modes and their population. Whereas the inelastic scattering probability can be quantitatively linked to the near field distribution, analytical results for simple light scattering geometries are scarce. Here we derive a fully analytical expression for the coupling strength between free electrons and optical near-fields in planar geometries representing dielectric thin films. Contributions to the overall coupling from the electric field above, below and within the sample are analyzed in detail. By carefully choosing the relative angles between electron beam, light and thin film and by accounting for a broad spectrum of photon energies, we demonstrate that one can imprint optical material properties like the reflectivity onto the electron energy distribution.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in dielectric films, how to obtain the structure and distribution of optical near - field modes by analyzing the inelastic scattering between electrons and the optical near - field. Specifically, the author aims to derive a fully analytical expression to describe the coupling strength between free electrons and the optical near - field in a planar geometry (representing a dielectric film).
### Problem Background
1. **PINEM Technology**
- Photon - Induced Near - field Electron Microscopy (PINEM) is an emerging technology for imaging the optical near - field near illuminated nanostructures.
- PINEM can reveal the structure and distribution of optical near - field modes by measuring the energy change of electrons after interacting with the light field.
2. **Existing Challenges**
- Although the PINEM technology has been able to quantitatively correlate the inelastic scattering probability with the near - field distribution, analytical results for simple light - scattering geometries are still scarce.
- Especially in complex structures such as dielectric films, the lack of analytical expressions limits the in - depth understanding of the electron - light coupling mechanism.
### Paper Objectives
The main objectives of the paper are:
1. **Derive Analytical Expressions**
- Derive a fully analytical formula to describe the coupling strength between free electrons and the optical near - field in a dielectric film.
- This formula will consider the relative angles between the electron beam, the light field, and the film, and cover a wide range of photon energies.
2. **Analyze Contributions from Different Regions**
- Analyze in detail the contributions of the electric fields above, inside, and below the film to the overall coupling strength.
- Study how these electric fields affect the energy distribution of electrons, and show how to map the optical properties of materials (such as reflectivity) to the electron energy distribution by selecting appropriate experimental conditions (such as angles and spectra).
3. **Application Examples**
- Through specific numerical simulations and experimental designs, show how to use this method to study the optical resonance properties of materials, such as Fabry - Perot resonance.
### Derivation of Analytical Expressions
To achieve the above objectives, the author adopts the following methods:
1. **Model Description**
- Consider an isotropic dielectric film with thickness \(d\) and complex refractive index \(n\).
- Electrons pass through the film with kinetic energy \(E_0\) and angle \(\beta\), while the film is irradiated by an external monochromatic plane - wave light field.
2. **Electric Field Distribution**
- The incident light is partially reflected and transmitted at the film interface, forming interference and generating guided Fabry - Perot modes.
- Calculate the electric field distribution in each region (above, inside, and below the film) using the multilayer recursive matrix method.
3. **Coupling Strength Formula**
- Derive a formula to describe the coupling strength between free electrons and the optical near - field:
\[
g=\frac{e}{\hbar\omega}\tilde{E}(\Delta k)
\]
where \(\tilde{E}(\Delta k)\) is the Fourier transform of the electric field along the electron trajectory.
4. **Fourier Transform**
- Perform Fourier transforms on the truncated plane waves in each region to obtain the electric field contributions from each region.
5. **Numerical Simulation**
- Verify the correctness of the theoretical formula through numerical simulation, and show the changes in coupling strength under different conditions (such as photon energy, film thickness, and incident angle).
### Application Prospects
This research not only provides a theoretical basis for the PINEM technology, but also shows how to directly map the optical properties of materials to the electron energy distribution by optimizing experimental conditions, providing new tools and methods for further exploring optical phenomena at the nanoscale.