Spectrally resolved free electron-light coupling strength in a transition metal dichalcogenide

Niklas Müller,Soufiane el Kabil,Gerrit Vosse,Lina Hansen,Christopher Rathje,Sascha Schäfer

2024-05-20

Abstract:Recent advancements in electron microscopy have introduced innovative techniques enabling the inelastic interaction of fast electrons with tightly confined and intense light fields. These techniques, commonly summarized under the term photon-induced nearfield electron microscopy now offer unprecedented capabilities for a precise mapping of the characteristics of optical near-fields with remarkable spatial resolution but their spectral resolution were only scarcely investigated. In this study, we employ a strongly chirped and temporally broadband light pulse to investigate the interaction between free electrons and light at the edge of a MoS2 thin film. Our approach unveils the details of electron-light coupling, revealing a pronounced dependence of the coupling strength on both the position and photon energy. Employing numerical simulations of a simplified model system we identify these modulations to be caused by optical interferences between the incident and reflected field as well as an optical mode guided within the transition metal dichalcogenide film.

Mesoscale and Nanoscale Physics,Optics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: **How to accurately measure and understand the relationship between the coupling strength of free electrons and light at the edge of transition - metal dichalcogenide (such as MoS₂) thin films and the position and photon energy as they vary**. Specifically, the authors hope to study this problem by using broadband, strongly chirped light pulses and reveal the details of spectral and spatial dependencies in electron - light interactions.

### Detailed Explanation

1. **Background Introduction**
- In recent years, the progress of electron microscopy technology has enabled researchers to utilize inelastic interactions between fast electrons and tightly - constrained strong light fields, which is known as photon - induced near - field electron microscopy (PINEM). The PINEM technique can provide high - spatial - resolution mapping of optical near - field characteristics, but its spectral resolution has not been fully studied.
- The PINEM technique combined with ultrafast transmission electron microscopy (UTEM) can observe the excited states of materials, such as two - dimensional polaritons, on the sub - nanometer scale.

2. **Research Objectives**
- This study aims to study the interaction between free electrons and light at the edge of MoS₂ thin films by using broadband, strongly chirped light pulses and reveal the dependence of the coupling strength on position and photon energy.
- The authors hope to explain the physical mechanisms behind these dependencies, especially the modulation caused by the interference between incident and reflected light and the optically guided modes inside the thin film, through a combination of experimental and numerical simulation methods.

3. **Research Methods**
- Use broadband, strongly chirped light pulses to irradiate the edge of MoS₂ thin films, and simultaneously use femtosecond electron pulses to probe the optical near - field.
- By changing the time delay between the electron pulse and the light pulse, adjust the instantaneous photon energy, so as to probe the electron - light coupling strength of the sample at different photon energies without changing the average optical power.
- The experimental results are analyzed by Fourier transform and numerical simulation to reveal the spatial and spectral dependencies of the coupling strength.

4. **Main Findings**
- The coupling strength shows obvious spectral and spatial dependencies, especially the periodic modulation on photon energy and the position of the thin - film edge.
- Numerical simulations show that these modulations are caused by the interference between incident and reflected light and the optically guided modes inside the thin film.

5. **Significance**
- This study demonstrates the potential of the PINEM technique in studying the optical response of semiconductor materials with high spatial and spectral resolution, especially in the sub - band - gap and near - band - gap regions.
- These results provide a basis for further research on semiconductor materials with inherent inhomogeneities, such as TMDC moiré bilayers, semiconductor heterostructures, and atomic defects.

### Conclusion

By using broadband, strongly chirped light pulses, the authors have successfully achieved spectral and spatial - resolution mapping of the electron - light coupling strength at the edge of MoS₂ thin films. The research results reveal the complex dependence of the coupling strength on position and photon energy and provide new insights into the application of the PINEM technique in studying the optical properties of semiconductor materials.