Polarization sensitivity in scattering-type scanning near-field optical microscopy -- towards nanoellipsometry

Felix G. Kaps,Susanne C. Kehr,Lukas M. Eng
2023-08-11
Abstract:Electric field enhancement mediated through sharp tips in scattering-type scanning near-field optical microscopy (s-SNOM) enables optical material analysis down to the 10-nm length scale, and even below. Nevertheless, mostly the out-of-plane electric field component is considered here due to the lightning rod effect of the elongated s-SNOM tip being orders of magnitude stronger as compared to any in-plane field component. Nonetheless, the fundamental understanding of resonantly excited near-field coupled systems clearly allows us to take profit from all vectorial components, especially also from the in-plane ones. In this paper, we theoretically and experimentally explore how linear polarization control of both near-field illumination and detection, can constructively be implemented to (non-)resonantly couple to selected sample permittivity tensor components, e.g. explicitly also to the in-plane directions. When applying the point-dipole model, we show that resonantly excited samples respond with a strong near-field signal, to all linear polarization angles. We then experimentally investigate the polarization-dependent responses for both non-resonant (Au) and phonon-resonant (3C-SiC) sample excitations at a 10.6~$\mu$m and 10.7~$\mu$m incident wavelength using a tabletop CO$_2$ laser. Varying the illumination polarization angle thus allows for quantitatively comparing the scattered near-field signatures for the two wavelengths. Finally, we compare our experimental data to simulation results, and thus gain the fundamental understanding of the polarization's influence on the near-field interaction. As a result, the near-field components parallel and perpendicular to the sample surface can be easily disentangled and quantified through their polarization signatures, connecting them directly to the sample's local permittivity.
Materials Science,Optics
What problem does this paper attempt to address?
The paper attempts to address the problem of how to achieve the detection and analysis of the anisotropic components of the dielectric tensor of a sample through linear polarization control in scattering-type scanning near-field optical microscopy (s-SNOM). Specifically, the study theoretically simulates and experimentally verifies how, under resonant conditions, polarization-sensitive measurements can be used to decouple the near-field components parallel to and perpendicular to the sample surface, and further directly relate these components to the local dielectric constant of the sample. The research focuses on demonstrating that even with standard s-SNOM probes, the in-plane response of the sample can be enhanced by adjusting the polarization angle of the incident light, and this response is highly correlated with the local properties of the sample, thereby achieving precise characterization of the local dielectric properties of the sample.