Abstract:10.6 ConclusionsIn the near future, it is expected that photonic devices such as integrated light sources and waveguides, which are much faster and consume less power than their electronic counterparts, will be used extensively to link current silicon-based technology devices for information transport and elaboration. Near-field microscopy, which is capable of accessing the nanometer scale in the optical domain, allows us to enhance our comprehension of the local optical properties of such devices. In this chapter we have seen how implementing the polarization contrast on a SNOM framework can yield a new, powerful tool that can give us insights into the anisotropic optical properties of micro- and nanophotonic structures. In fact, absorption and/or emission processes at the nanometer scale define the optoelectronic behavior of these materials, and their anisotropy represents one of the most important parameters to be studied and understood for final device engineering. PM-SNOM tailors micropolarimetry to the nanometer scale. Quantitative measurements of the birefringent and dichroic properties of single nanocrystals, thin films, organic/inorganic photonic crystals and waveguides demonstrate the wide application spectrum of PM-SNOM in materials science and engineering. With its several experimental designs, PM-SNOM is still a topic of strong scientific interest. The development of PM techniques on SNOM frameworks capable of higher resolution and new, better polarization-conserving probes are just a few examples of the current research in this field.

Polarization-Modulation Techniques in Near-Field Optical Microscopy for Imaging of Polarization Anisotropy in Photonic Nanostructures