Abstract:The newly emerged two-dimensional (2D) materials family of MSi2N4, where M is a transition metal atom (i.e., Mo, W, etc.), has the potential to be named after the conventional and very popular transition metal di-chalcogenides (TMDC), which got their reputation for having bandgap tunability and high mobility. The HfSi2N4 and HfGe2N4 2D materials are members of the MSi2N4 family and possess very good figure of merit (ZT) and have high mobility, proving their suitability for thermoelectric applications. The HfSi2N4 and HfGe2N4 showed considerable ZT of 0.90 and 0.89, respectively, for p-type and 0.83 and 0.79 for n-type, at 900 K along with high mobility according to the solutions obtained after solving the Boltzmann Transport Equation (BTE). The HfGe2N4 also showed a ZT of 0.84 at 600 K and 0.68 at 300 K, which is also excellent for low-temperature operation. The bandgaps (BG) obtained for HfSi2N4 and HfGe2N4 according to the Heyd-Scuseria-Ernzerhof (HSE) approximation were 2.89 eV and 2.75 eV. The first absorption peak showed in the blue region of the visible spectrum; from this, their usefulness in visible range photodetectors can also be inferred.

What problem does this paper attempt to address?

This paper aims to solve the following problems: 1. **Explore the thermoelectric properties of two - dimensional materials**: - The paper mainly studied the thermoelectric properties of HfSi₂N₄ and HfGe₂N₄ monolayer materials, and evaluated their potential as thermoelectric materials through first - principles calculations. These materials belong to the MX₂N₄ family (M is a transition metal atom), have a good thermoelectric figure of merit (ZT) and high mobility, and are suitable for thermoelectric applications. 2. **Optimize the thermoelectric figure of merit (ZT)**: - The researchers obtained key parameters such as the Seebeck coefficient, electrical conductivity, and thermal conductivity of HfSi₂N₄ and HfGe₂N₄ at different temperatures by solving the Boltzmann transport equation (BTE). The results show that at 900 K, HfSi₂N₄ and HfGe₂N₄ exhibit significant ZT values respectively: for p - type doping, they are 0.89 and 0.90 respectively; for n - type doping, they are 0.79 and 0.83 respectively. 3. **Understand the relationship between electronic, dielectric, and thermoelectric properties**: - By comparing the electronic structures, dielectric properties, and thermoelectric properties of HfSi₂N₄ and HfGe₂N₄, the researchers attempted to reveal the internal connections between these properties. For example, HfGe₂N₄ also exhibits excellent ZT values (0.84 and 0.68 respectively) at 600 K and 300 K, indicating that it also has potential in low - temperature operations. 4. **Explore potential application fields**: - In addition to thermoelectric properties, the researchers also explored the application potential of these materials in photodetectors. According to the calculation results, the band gaps of HfSi₂N₄ and HfGe₂N₄ are 2.89 eV and 2.75 eV respectively (using the HSE approximation), and their absorption peaks are located in the blue region of the visible spectrum, indicating that they have potential application values in the visible light range. ### Formula summary - **Thermoelectric figure of merit (ZT) formula**: \[ ZT=\frac{S^{2}\sigma T}{\kappa_{e}+\kappa_{l}} \] where \( S \) is the Seebeck coefficient, \( T \) is the temperature, \( \sigma \) is the electrical conductivity, and \( \kappa_{e} \) and \( \kappa_{l} \) are the electronic thermal conductivity and lattice thermal conductivity respectively. - **Refractive index (\( \eta \)) and extinction coefficient (\( K \)) formulas**: \[ \eta = \sqrt{\frac{\sqrt{\epsilon_{r}^{2}+\epsilon_{i}^{2}}+\epsilon_{r}}{2}} \] \[ K=\sqrt{\frac{\sqrt{\epsilon_{r}^{2}+\epsilon_{i}^{2}}-\epsilon_{r}}{2}} \] \[ \alpha=\frac{2K\omega}{c} \] where \( \epsilon_{r} \) and \( \epsilon_{i} \) are the real part and the imaginary part of the dielectric function respectively, \( \omega \) is the frequency, and \( c \) is the speed of light. Through these studies, the paper aims to provide a theoretical basis for the development of high - performance thermoelectric materials and provide guidance for future experimental research.

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