Thermoelectric properties of X3N2O2 (X = Hf, Zr) MXene monolayers: a first-principles study

W. Cao,Haohuan Li,Xinxin Yan
DOI: https://doi.org/10.1039/d3ra02835f
IF: 4.036
2023-06-15
RSC Advances
Abstract:MXene monolayers have received increasing attention due to their unique properties, particularly their high conductivity, which shows great potential in thermoelectric materials. In this paper, we present a theoretical study of the thermoelectric properties of X3N2O2 (X = Hf, Zr) MXene monolayers, taking electron–phonon coupling into consideration. Owing to their similar geometrical structures, electronic band structures, and phonon dispersions, X3N2O2 MXene monolayers exhibit homogeneous electron and phonon transport properties. The conduction band shows multi-valley characteristics which leads to better n-type electron transport properties than p-type ones. The maximum values of the n-type power factor can reach 32 μW cm−1 K−2 for the Hf3N2O2 monolayer and 23 μW cm−1 K−2 for the Zr3N2O2 monolayer. In terms of phonon transport, the lattice thermal conductivity for the Zr3N2O2 monolayer is higher than that for the Hf3N2O2 monolayer, due to larger phonon group velocity. Our results show that the Hf3N2O2 monolayer is more suitable for thermoelectric materials than the Zr3N2O2 monolayer, with optimal n-type thermoelectric figure of merit (ZT) values of 0.36 and 0.15 at 700 K, respectively. These findings may be useful for the development of wearable thermoelectric devices and sensor applications based on X3N2O2 MXene monolayers.
Medicine,Physics,Materials Science
What problem does this paper attempt to address?
The paper aims to study the thermoelectric properties of X₃N₂O₂ (X=Hf, Zr) MXene monolayer materials. Specifically, the paper theoretically analyzes the thermoelectric properties of these materials by considering electron-phonon coupling effects through first-principles calculations and Boltzmann transport theory. The study found that Hf₃N₂O₂ monolayer material has a better n-type power factor and lower lattice thermal conductivity compared to Zr₃N₂O₂ monolayer material, making it more promising for thermoelectric material applications. Additionally, the maximum thermoelectric figure of merit (ZT) of Hf₃N₂O₂ monolayer material can reach 0.36 at 700 K, while the maximum ZT value of Zr₃N₂O₂ monolayer material is only 0.15. These results are significant for the development of wearable thermoelectric devices and sensors based on MXene monolayer materials.