Abstract:Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect transistors (FeFETs). A comparative studies of various conventional neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed by successful realization of the proposed computing approaches. Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von-Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are getting developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer a rich set of device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect Transistors (FeFETs). A comparative studies of various unconventional and brain-inspired neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed for these device technologies.

Prospects for non-linear memristors as so-far missing core hardware element for transferless data computing and storage

Memristive, Spintronic, and 2D-Materials-Based Devices to Improve and Complement Computing Hardware

Building Neuromorphic Circuits with Memristive Devices

Energy-Efficient, Stable and Temperature-Tolerant Neuromorphic Device Based on Single Crystals of Halide Perovskites

Phase-change Heterostructure Enables Ultralow Noise and Drift for Memory Operation.

Highly Efficient Neuromorphic Computing Systems with Emerging Nonvolatile Memories

Memristive Computing Devices and Applications

Memristor-based Energy-Efficient Neuromorphic Computing

Device and Materials Requirements for Neuromorphic Computing

Memristive Devices and Networks for Brain‐Inspired Computing

In-memory computing with resistive switching devices

Memristors -- from In-memory computing, Deep Learning Acceleration, Spiking Neural Networks, to the Future of Neuromorphic and Bio-inspired Computing

CMOS Back-End Compatible Memristors for in Situ Digital and Neuromorphic Computing Applications.

(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices

Nonvolatile Memristor As a New Platform for Non-Von Neumann Computing

In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory

A Learnable Parallel Processing Architecture Towards Unity of Memory and Computing

Memristors—From In‐Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio‐Inspired Computing

The Future of Memristors: Materials Engineering and Neural Networks

Resistive Switching Materials for Information Processing

Nonlinearity in Memristors for Neuromorphic Dynamic Systems