Phonon Linewidths in Twisted Bilayer Graphene near Magic Angle

Shinjan Mandal,Indrajit Maity,H. R. Krishnamurthy,Manish Jain

2024-07-03

Abstract:We present a computational study of the phonon linewidths in twisted bilayer graphene arising from electron-phonon interactions and anharmonic effects. The electronic structure is calculated using distance-dependent transfer integrals based on the atomistic Slater-Koster tight-binding formalism, including electron-electron interactions treated at the Hartree level, and the phonons are calculated using classical force fields. These ingredients are used to calculate the phonon linewidths arising from electron-phonon interactions. Furthermore, anharmonic effects on the linewidths are computed using the mode-projected velocity autocorrelation function obtained from classical molecular dynamics. We predict a moiré potential induced splitting of this mode, which arises due to contributions from high symmetry stacking regions. Our findings show that both electron-phonon and anharmonic effects have a significant impact on the linewidth of the Raman active G mode near the magic angle.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

This paper mainly discusses the problem of phonon linewidth in twisted bilayer graphene (TBG) with a magic angle twist. It is caused by the electron-phonon interaction and anharmonic effects. The researchers calculated the electronic structure, used atomic interlayer transfer integrals based on the Slater-Koster tight-binding method, and considered electron-electron interactions. They also simulated the phonon spectrum using a classical force field. Furthermore, they calculated the influence of anharmonic effects on the phonon linewidth through classical molecular dynamics simulations.

In TBG near the magic angle, both the electron-phonon interaction and anharmonic effects significantly affect the linewidth of the Raman-active G mode. The study found that the G mode splits due to the influence of the moiré superlattice, which is related to contributions from high-symmetry stacking regions. As the twist angle approaches the magic angle, the moiré potential enhances, leading to an increase or decrease in the linewidth of the G mode depending on the electron doping level.

In addition, the paper mentions the contributions of electron-phonon scattering and phonon-phonon scattering to the linewidth of the G mode. It analyzes the Raman activity in different frequency ranges by constructing the spectral function. The linewidth variation caused by anharmonic effects depends on temperature but is not influenced by electron doping. By analyzing localized phonon modes in different regions, the researchers provide a deeper understanding of the physical mechanisms involved.

In conclusion, this paper aims to address how to understand and calculate the effects of electron-phonon interaction and anharmonic effects on the phonon linewidth in twisted bilayer graphene with a magic angle twist. This is of great significance for revealing the electronic properties and Raman spectroscopic characteristics of the material.