Electron-phonon coupling in a magic-angle twisted-bilayer graphene device

Andreij C. Gadelha,Viet-Hung Nguyen,Eliel G. Neto,Fabiano Santana,Markus B.Raschke,Michael Lamparski,Vincent Meunier,Jean-Christophe Charlier,Ado Jorio

DOI: https://doi.org/10.1021/acs.nanolett.2c00905

2021-10-28

Abstract:The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $\theta=0^{\circ}$, $\sim 1.1^{\circ}$ (magic-angle) and $\sim 7^{\circ}$ (large angle). The results show a broad and p/n-asymmetric doping behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG.

Mesoscale and Nanoscale Physics,Materials Science,Strongly Correlated Electrons