Abstract:Achieving a large and tunable Rashba effect is of great significance for advancing both the understanding and applications of spintronics. Two-dimensional nanostructures that are expected to sustain large mechanical deformation provide a great platform to study the strain effect on the tunability of the Rashba effect. Using first-principles density functional theory simulations, we investigate the mechanical stability and the effect of biaxial tensile strain on the Rashba parameters of the two-dimensional BiTeBr monolayer sheet. The mechanical stability is computed taking into account both elastic and dynamical aspects. The simulated stress-strain curve shows that the BiTeBr monolayer sheet can withstand a biaxial loading stress up to 4.36 GPa with a critical strain of 17%. Further phonon dispersion calculations indicate that the structure becomes unstable due to the existence of imaginary frequencies for strains beyond 7% limiting the maximum stress to 2.79 GPa. Moreover, the electronic structures and Rashba parameters are calculated as a function of strain from 0% to 7%. The band gaps remain indirect and exhibit a linear dependence on the strain. The decrease in band gaps with increasing strains can be attributed to the different bonding characters of near-gap states that the conduction band minimum is of anti-bonding nature while the valence band maximum is mainly non-bonding. The Rashba parameters can be tuned by 33.6% from 1.28 to 1.71 eV angstrom following a linear dependence on strain. This enhancement can be understood from the perspectives of enhanced charge transfer and charge distribution inhomogeneity induced by strain. The intuitive understanding could be used to understand and motivate the application of various methods that can lead to charge redistribution to tune the electronic properties of Rashba materials.

Nanoscale variation of the Rashba energy in BiTeI

Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface

Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI

Temperature dependent infrared spectroscopy of the Rashba spin-splitting semiconductor BiTeI

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

Nanoimaging of Electronic Heterogeneity in Bi2Se3 and Sb2Te3 Nanocrystals

Enhancement of Giant Rashba Splitting in BiTeI under Asymmetric Interlayer Interaction

Hot carrier dynamics of BiTeI with large Rashba spin splitting

Large Rashba Splitting in Highly Asymmetric CdTe/PbTe/PbSrTe Quantum Well Structures

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

Ideal strength and strain engineering of the Rashba effect in two-dimensional BiTeBr

Quantum oscillations in Rashba semiconductor BiTeCl

Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3

Direct atom-by-atom chemical identification of nanostructures and defects of topological insulators.

Large Tunable Spin-to-Charge Conversion Induced by Hybrid Rashba and Dirac Surface States in Topological Insulator Heterostructures

Enhancement and anisotropy of electron Lande factor due to spin-orbit interaction in semiconductor nanowires

Zeeman effect on surface electron transport in topological insulator Bi2Se3 nanoribbons

Microscopic mechanism for asymmetric charge distribution in Rashba-type surface states and the origin of the the energy splitting scale

Ideal two-dimensional electron systems with a giant Rashba-type spin splitting in real materials: surfaces of bismuth tellurohalides