Abstract: In systems with broken inversion symmetry spin-orbit coupling (SOC) yields a Rashba-type spin splitting of electronic states, manifested in a k-dependent splitting of the bands. While most research had previously focused on 2D electron systems, recently a three-dimensional (3D) form of such Rashba-effect was found in a series of bismuth tellurohalides. Whereas these materials exhibit a very large spin-splitting, they lack an important property concerning functionalization, namely the possibility to switch or tune the spin texture. This limitation can be overcome in a new class of functional materials displaying Rashba-splitting coupled to ferroelectricity: the ferroelectric Rashba semiconductors (FERS). Using spin- and angle-resolved photoemission spectroscopy (SARPES) we show that GeTe(111) forms a prime member of this class, displaying a complex spin-texture for the Rashba-split surface and bulk bands arising from the intrinsic inversion symmetry breaking caused by the ferroelectric polarization of the bulk (FE). Apart from pure surface and bulk states we find surface-bulk resonant states (SBR) whose wavefunctions entangle the spinors from the bulk and surface contributions. At the Fermi level their hybridization results in unconventional spin topologies with cochiral helicities and concomitant gap opening. The GeTe(111) surface and SBR states make the semiconductor surface conducting. At the same time our SARPES data confirm that GeTe is a narrow-gap semiconductor, suggesting that GeTe(111) electronic states are endowed with spin properties that are theoretically challenging to anticipate. As the helicity of the spins in Rashba bands is connected to the direction of the FE polarization, this work paves the way to all-electric non-volatile control of spin-transport properties in semiconductors.

Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface

Nanoscale variation of the Rashba energy in BiTeI

Quantum oscillations in Rashba semiconductor BiTeCl

Temperature dependent infrared spectroscopy of the Rashba spin-splitting semiconductor BiTeI

Large Rashba Splitting in Highly Asymmetric CdTe/PbTe/PbSrTe Quantum Well Structures

Strongly Anisotropic Spin and Orbital Rashba Effect at a Tellurium - Noble Metal Interface

Enhancement of Giant Rashba Splitting in BiTeI under Asymmetric Interlayer Interaction

Screening of Polar Electron-Phonon Interactions near the Surface of the Rashba Semiconductor BiTeCl

Interfacial Bonding and Structure of Bi2te3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering

Spin-orbit interaction effect in the electronic structure of \BiTe \ observed by angle-resolved photoemission spectroscopy

Large Tunable Rashba Spin Splitting of A Two-Dimensional Electron Gas in Bi2se3

Rashba spin-splitting control at the surface of the topological insulator Bi2Se3

The Giant Spin-to-Charge Conversion of the Layered Rashba Material BiTeI

Rashba Effect in Pbte/Pbsrte Asymmetric Quantum Wells

Surface versus bulk contributions to the giant Rashba splitting in the ferroelectric {\alpha}-GeTe(111) semiconductor

Unoccupied Topological Surface State in Bi2te2se

Synthesis and Thermoelectric Properties of Rashba Semiconductor BiTeBr with Intensive Texture

Topological Surface Dirac Fermion in BiTeCl-Based Heterostructures

Scanning tunneling microscopy study of the possible topological surface states in BiTeCl

Anisotropic Rashba splitting dominated by out-of-plane spin polarization in two-dimensional Janus $XA_{2}Y$ ($A$= Si, Sn, Ge; $X,Y$= Sb, Bi) with surface imperfection

Defect-mediated Rashba engineering for optimizing electrical transport in thermoelectric BiTeI