Abstract:Diamond color centers have proven to be versatile quantum emitters and exquisite sensors of stress, temperature, electric and magnetic fields, and biochemical processes. Among color centers, the silicon-vacancy (SiV[Formula: see text]) defect exhibits high brightness, minimal phonon coupling, narrow optical linewidths, and high degrees of photon indistinguishability. Yet the creation of reliable and scalable SiV[Formula: see text]-based color centers has been hampered by heterogeneous emission, theorized to originate from surface imperfections, crystal lattice strain, defect symmetry, or other lattice impurities. Here, we advance high-resolution cryo-electron microscopy combined with cathodoluminescence spectroscopy and 4D scanning transmission electron microscopy (STEM) to elucidate the structural sources of heterogeneity in SiV[Formula: see text] emission from nanodiamond with sub-nanometer-scale resolution. Our diamond nanoparticles are grown directly on TEM membranes from molecular-level seedings, representing the natural formation conditions of color centers in diamond. We show that individual subcrystallites within a single nanodiamond exhibit distinct zero-phonon line (ZPL) energies and differences in brightness that can vary by 0.1 meV in energy and over 70% in brightness. These changes are correlated with the atomic-scale lattice structure. We find that ZPL blue-shifts result from tensile strain, while ZPL red shifts are due to compressive strain. We also find that distinct crystallites host distinct densities of SiV[Formula: see text] emitters and that grain boundaries impact SiV[Formula: see text] emission significantly. Finally, we interrogate nanodiamonds as small as 40 nm in diameter and show that these diamonds exhibit no spatial change to their ZPL energy. Our work provides a foundation for atomic-scale structure-emission correlation, e.g., of single atomic defects in a range of quantum and two-dimensional materials.

Compressive-Sensing-Enhanced First-Principles Calculation of Photoluminescence Spectra in Color Centers: A Comparison between Theory and Experiment for the G Center in Silicon

Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers

Hopping of the center-of-mass of single G centers in silicon-on-insulator

Genuine and faux single G centers in carbon-implanted silicon

A QM/MM equation-of-motion coupled-cluster approach for predicting semiconductor color-center structure and emission frequencies

Photoluminescence excitation spectroscopy of SiV$^{-}$ and GeV$^{-}$ color center in diamond

Optical line shapes of color centers in solids from classical autocorrelation functions

First‐Principles Calculations of Quantum Efficiency for Point Defects in Semiconductors: the Example of Yellow Luminance by GaN: CN+ON and GaN:CN

First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Optical lineshapes of the C-center in silicon from ab initio calculations: Interplay of localized modes and bulk phonons

First-principles Calculations of Photoluminescence and Defect States of Ce3+ -Doped (Ca/<…

Unraveling sources of emission heterogeneity in Silicon Vacancy color centers with cryo-cathodoluminescence microscopy

Influence of Point Defects on Optical Properties of GaN-based Materials by First Principle Study

Enhancement of Intrinsic Optical Transitions in Silicon Nanocrystals by State Localization

Photon Collection Enhancement of Shallow Single Spin Defects in Silicon Carbide

An $\mathrm{\textit{ab-initio}}$ effective solid state photoluminescence by frequency constraint of cluster calculation

Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

Carbon and Silicon Impurity Defects in GaN: Simulating Single-Photon Emitters by First Principles

Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures

Theoretical Simulation and Experimental Verification of the Competition between Different Recombination Channels in GaN Semiconductor