Abstract:The stable and metastable configurations of interstitial Mg in GaN and its migration energy barriers are studied from first-principles calculations. In addition to the conventional octahedral (O, global energy minimum) and tetrahedral (T, metastable) interstitial sites, we discover two new metastable interstitial complexes with formation energy lower than or close to that of T configuration but higher than O. Except for Mg at O site which only has +2 charge state, all other configurations also permit charge states +1 or 0. The minimum migration energy barrier for Mg$^{++}$ between O sites is found to be 1.95 eV. We further find that, when Fermi energy is close to the conduction band, the migration between O sites via metastable configurations occur through a recombination-enhanced mechanism in which the charge state changes from +2 at O site to 0 at metastable sites by consecutive capture of two electrons during the migration. This process greatly reduces the migration energy barrier to as low as 1.47 eV. This value is consistent with experiments, and we also discuss the role of intrinsic defects in the migration of Mg.

What problem does this paper attempt to address?

This paper mainly discusses the stability and migration mechanism of magnesium (Mg) interstitial atoms in gallium nitride (GaN). Researchers found two new metastable compounds, in addition to the known octahedral (O) and tetrahedral (T) interstitial positions, with formation energies lower than or close to the T configuration through first principles calculations. These positions allow magnesium to exist in +1 or 0 charge states, while magnesium in the O position only maintains a +2 state. When the Fermi level approaches the bottom of the conduction band, Mg++ undergoes a migration process through a recombination-enhanced mechanism, changing from a +2 charge state in the O position to a 0 charge state in the intermediate position, capturing two electrons successively, significantly reducing the migration energy barrier to 1.47 eV. This is consistent with experimental results, and the paper also discusses the role of intrinsic defects in Mg migration. The paper mentions that for semiconductor materials such as GaN, doping is crucial in the manufacturing of electronic devices, and atomic diffusion and migration during the annealing process after ion implantation are crucial for the distribution of doping concentration. Although previous studies have shown that the migration energy barrier of Mg in GaN is relatively high (about 2 eV), this work reveals how the change in charge state reduces this barrier, providing a new perspective that is more in line with experimental observations. In addition, the study also mentions how intrinsic defects such as nitrogen vacancies may affect the migration of Mg during ion implantation, and points out that annealing under high-pressure nitrogen environment can inhibit the diffusion of Mg in GaN, which may be related to the nitrogen vacancy acting as an electron donor causing the Fermi level to rise.

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