Sixth cranial nerve palsy and contralateral hemiparesis (Raymond’s syndrome) sparing the face

P. Mégevand,B. Pilly,J. Delavelle,N. Tajouri,A. Safran,T. Landis,C. Lüscher

DOI: https://doi.org/10.1007/s00415-009-5041-6

2009-03-01

Journal of Neurology

Abstract:

What problem does this paper attempt to address?

First-principles Study on Mono-Vacancy Self Diffusion and Recovery in Tungsten Crystal

Shu Long Wen,Ji Ming Chen,Xiang Liu,Hao Zhu,Hong Yan Chang,Zheng Huang,Min Pan,Yong Zhao

DOI: https://doi.org/10.1016/j.fusengdes.2016.02.044

IF: 1.905

2016-01-01

Fusion Engineering and Design

Abstract:The point defects behavior becomes one of the most basic issues under the challenge of fusion environment. The recovery mechanisms of Frenkel pair defects and the self-diffusion coefficient of mono-vacancy in bulk bcc tungsten were researched by the first principle calculations. The calculation of migration energy curves for < 111 > SIA5 indicated that the process of the Frenkel pair recovery had a close correlation with the "I-V" distance, and the migration barrier energies E-m was within a limit range of 1.86-2.08 eV. It was found that the self-recovery region had an ellipsoid profile with the semiminor axis of 2.7 angstrom and the semimajor axis of 5.5 angstrom. The self-diffusion coefficients of the mono-vacancy were calculated and the results showed that the probability for the vacancy migration was not only associated with the Em but also the temperature being challenged. (C) 2016 Elsevier B.V. All rights reserved.
Investigation of Ga interstitial and vacancy diffusion in $β$-Ga$_2$O$_3$ via split defects: a direct approach via master diffusion equations

Channyung Lee,Michael A. Scarpulla,Elif Ertekin

2024-02-15

Abstract:The low symmetry of monoclinic $\beta$-Ga$_2$O$_3$ leads to elaborate intrinsic defects, such as Ga vacancies split amongst multiple lattice sites. These defects contribute to fast, anisotropic Ga diffusion, yet their complexity makes it challenging to understand dominant diffusion mechanisms. Here, we predict the 3D diffusivity tensors for Ga interstitials (Ga${_i^{3+}}$) and vacancies (V${_{Ga}^{3-}}$) via first principles and direct solution of the master diffusion equations. We first explore the maximum extent of configurationally complex ''$N$-split'' Ga interstitials and vacancies. With dominant low-energy defects identified, we enumerate all possible elementary hops connecting defect configurations to each other, including interstitialcy hops. Hopping barriers are obtained from nudged elastic band simulations. Finally, the comprehensive sets of (i) defect configurations and their energies and (ii) the hopping barriers that connect them are used to construct the master diffusion equations for both Ga${_i^{3+}}$ and V${_{Ga}^{3-}}$. The solution to these equations yields the Onsager transport coefficients, i.e. the components of the 3D diffusivity tensors $D_{{Ga}_i}$ and $D_{V_{Ga}}$ for Ga${_i^{3+}}$ and V${_{Ga}^{3-}}$, respectively. It further reveals the active diffusion paths along all crystallographic directions. We find that both Ga${_i^{3+}}$ and V${_{Ga}^{3-}}$ diffusion are fastest along the $c$-axis, due to 3-split defects that bridge neighboring unit cells along the $c$-axis and divert diffusing species around high-energy bottlenecks. Although isolated Ga${_i^{3+}}$ diffuse faster than isolated V${_{Ga}^{3-}}$, self-diffusion of Ga is predominantly mediated by V$_{Ga}^{3-}$ due to the higher V$_{Ga}^{3-}$ defect concentration under most thermodynamic environments.

Materials Science
Self Diffusion in Silicon Using the Ackland Potential

M. M. De Souza,G. A. J. Amaratunga

DOI: https://doi.org/10.1007/978-3-7091-6657-4_24

1993-01-01

Abstract:The study of self-diffusion using the Ackland potential yields an activation energy which lies within the experimental range of 4–5 eV. This study yields a configurational entropy for the interstitial defect of the order of 4.2K. The formation energy of both interstitials and vacancies has been found to be 3.9 ±0.1eV. The migration energy of interstitials is 0.7±0.1 eV and it is 0.2 eV for the vacancies.
Gallium interstitial contributions to diffusion in gallium arsenide

J. T. Schick,C. G. Morgan,P. Papoulias

DOI: https://doi.org/10.1063/1.3644937

2011-03-19

Abstract:Enthalpies of formation of gallium interstitials and all the other native point defects in gallium arsenide are calculated using the same well-converged \emph{ab initio} techniques. Using these results, equilibrium concentrations of these defects are computed as a function of chemical potential from the arsenic rich limit to the gallium rich limit and as a function of the doping level from $p$-type to $n$-type. Gallium interstitial diffusion paths and migration barriers for diffusion are determined for all the interstitial charge states which are favored for Fermi levels anywhere in the gap, and the charge states which dominate diffusion as a function of Fermi level are identified. The effects of chemical potential, doping level, and non-equilibrium defect concentrations produced by ion implantation or irradiation on gallium self-diffusion are examined. Results are consistent with experimental results across the ranges of doping and stoichometry where comparisons can be made. Finally, these calculations shed some light on the complex situation for gallium diffusion in gallium arsenide that is gallium-rich and doped heavily $p$-type.

Materials Science
Divacancies in the Ga-Related Iii-V Compound Semiconductors - Electronic-Structure and Charge States

HQ XU

DOI: https://doi.org/10.1103/physrevb.46.12251

IF: 2.877

1990-01-01

Journal of Applied Physics

Abstract:Self-consistent semiempirical tight-binding theory is used to study the neutral and charged states of the ideal vacancies in GaP and GaSb. For the neutral states, the diagonal elements of the defect potential on the first and second nearest neighbors of a vacancy are obtained by a charge-neutrality condition, while for the charged states, these matrix elements are determined self-consistently. The theory also takes the off-diagonal matrix elements corresponding to atoms adjacent to a vacancy into account. The defect energy levels and the localizations of the levels are computed using the Lanczos–Haydock recursion method. The general character of the electronic structure of vacancies in the Ga-related III-V compound semiconductors has been extracted from these calculations and from the similar calculations we performed for vacancies in GaAs. We analyze the defect states of the vacancies in terms of chemical bondings of the crystals. It is shown that, for the cation vacancies (the Ga vacancies) in the three semiconductors, both the a1 resonances at the top of the valence band and the t2 bound states in the fundamental gap consist mainly of the atomiclike p orbitals centered on the four nearest neighbors, whereas for the anion vacancies, the a1 states at the top of the valence band contain mainly the atomiclike p orbitals of the four neighboring atoms and the t2 bound states in the fundamental gap contain both the atomiclike s and the atomiclike p orbitals of the four neighboring atoms. We also find that the t2 gap levels of the charged cation (anion) vacancies in the three semiconductors are all located in the lower (upper) half of the fundamental gap. The calculated results are in agreement with available results from local density calculations and support the identifications of the vacancy defects by the positron-annihilation technique.
On the solubility and diffusivity of the intrinsic point defects in germanium

Jan Vanhellemont,Piotr Śpiewak,Koji Sueoka

DOI: https://doi.org/10.1063/1.2429718

IF: 2.877

2007-02-01

Journal of Applied Physics

Abstract:There is a strong interest to use germanium as an active device layer in deep sub-micron devices. This imposes similar stringent material and process requirements for germanium as for silicon. Lattice defect formation during crystal growth and device processing as well as dopant diffusion and activation are to a large extent controlled by the intrinsic point defects in the semiconductor. The properties of the vacancy and the self-interstitial in germanium are, however, not well known. The scarce available experimental data are combined with ab initio and molecular-dynamics calculations and other published simulation results. Based on this a best estimate is made for the formation and migration energies of the vacancy and the self-interstitial in germanium.

physics, applied
Electronic-Structure of Neutral and Charged Vacancies in Gaas

HQ XU,U LINDEFELT

DOI: https://doi.org/10.1103/physrevb.41.5979

1990-01-01

Abstract:We have performed self-consistent tight-binding calculations on the neutral and charged states of the undistorted Ga and As vacancies in GaAs with the Lanczos-Haydock recursion method. For neutral states, defect potentials on the first- and second-nearest neighbors of a vacancy are obtained by a charge-neutrality condition, while for charged states these potentials are determined self-consistently. A discussion of the nature of both anion and cation vacancies in III-V compound semiconductors in terms of the bulk properties is given. The general characteristics of the electronic structure of the vacancies in GaAs are extracted from a detailed calculation and analysis in the case where a vacancy is neutral. In addition, we have calculated the electronic structure for the various charge states of the vacancies in GaAs. The predicted trends for the bound electron states in the gap are presented. Our results agree well with the self-consistent local-density-theory calculation for GaAs:${\mathit{V}}_{\mathrm{Ga}}^{0}$ and GaAs:${\mathit{V}}_{\mathrm{As}}^{0}$ of Bachelet et al. and with the recently published positron-annihilation-spectroscopy data for two charge-state transitions of the arsenic vacancy, ${\mathit{V}}_{\mathrm{As}}^{2\mathrm{\ensuremath{-}}}$\ensuremath{\rightarrow}${\mathit{V}}_{\mathrm{As}}^{\mathrm{\ensuremath{-}}}$ and ${\mathrm{V}}_{\mathrm{As}}^{\mathrm{\ensuremath{-}}}$\ensuremath{\rightarrow}${\mathit{V}}_{\mathrm{As}}^{0}$, by Corbel et al.
X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Sj Xu,H Wang,Q Li,Mh Xie,Xc Wang,Wj Fan,Sl Feng

DOI: https://doi.org/10.1063/1.1314298

IF: 4

2000-01-01

Applied Physics Letters

Abstract:We report on the characterization of thermally induced interdiffusion in InAs/GaAs quantum-dot superlattices with high-resolution x-ray diffraction and photoluminescence techniques. The dynamical theory is employed to simulate the measured x-ray diffraction rocking curves of the InAs/GaAs quantum-dot superlattices annealed at different temperatures. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness, and stress variations caused by interdiffusion are taken in account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The diffusion coefficients at different temperatures are estimated. (C) 2000 American Institute of Physics. [S0003-6951(00)02440-2].
Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Nathan D. Rock,Haobo Yang,Brian Eisner,Aviva Levin,Arkka Bhattacharyya,Sriram Krishnamoorthy,Praneeth Ranga,Michael A Walker,Larry Wang,Ming Kit Cheng,Wei Zhao,Michael A. Scarpulla

2024-03-26

Abstract:Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000-1100 C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on Sn-doped beta-gallium oxide substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of gallium vacancies from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped gallium oxide such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in beta-gallium oxide wafers.

Materials Science
A Molecular Dynamics Investigation of the Micro-Mechanism for Vacancy Formation Between Ag3Sn and Βsn under Electromigration

Jicheng Zhang,Jian Yang,Lihua Liang,Yangjian Xu,Jing Guo

DOI: https://doi.org/10.1080/00268976.2017.1367855

2018-01-01

Molecular Physics

Abstract:ABSTRACT In this paper, the vacancy formation at the interface between different grains (Ag3Sn and βSn) induced by electromigration was investigated from the perspective of atom diffusion. To explain the micro-mechanism of void formation near the interface, the diffusion coefficient was specifically studied here via molecular dynamics (MD) simulation. By comparing the atom diffusion rates of atoms in βSn and Ag3Sn, a significant difference could be observed when the temperature is up to 400 K. The Sn atoms in βSn have a higher diffusion coefficient (8E − 9 cm2/s) than atoms in Ag3Sn (4E − 9 cm2/s), which indicated that the void would be prone to appear in βSn near the interface. Moreover, the effect of grain size and pressure on atom diffusivity was studied. Results show that the atom diffusivity depends heavily on the grain size of Ag3Sn. When the thickness of Ag3Sn is increased from 4 to 12 nm, this difference is significant when the temperature is only 375 K. On the other hand, the atom diffusion character of Ag3Sn and βSn changes substantially under constant pressure. The difference of the atom diffusion rate would be inhibited by pressure perpendicular to the interface, which indicated voids have less possibility to appear herein.
Diffusion of Ga adatoms at the surface of GaAs(001) c(4x4) $α$ and $β$ reconstructions

Marcin Mińkowski,Magdalena A. Załuska-Kotur

DOI: https://doi.org/10.1103/PhysRevB.91.075411

2014-11-12

Abstract:Diffusion of Ga adatom at the As rich, low temperature c(4$\times$4) reconstructions of GaAs(001) surface is analyzed. We use known energy landscape for the motion of Ga adatom at two different $\alpha$ and $\beta$ surface phases to calculate diffusion tensor by means of the variational approach. Diffusion coefficient describes the character of low density adatom system motion at the surface. The resulting expressions allow to identify main paths of an adatom diffusion and to calculate an activation energy of this process. It is shown that diffusion at the $\alpha$ surface is slower and more anisotropic than this for the $\beta$ surface.

Statistical Mechanics
X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

H Wang,SJ Xu,Q Li,SL Feng

DOI: https://doi.org/10.1088/0256-307x/18/6/333

2001-01-01

Abstract:Thermal-induced interdiffusion in InAs/GaAs quantum dot superlattices is studied by high-resolution x-ray diffraction rocking curve and photoluminescence techniques. With increasing annealing temperatures, up to 300 meV a blueshift of the emission peak position and down to 16.6 meV a narrowing of the line width are found in the photoluminescence spectra, and respective intensity of the higher-order satellite peaks to lower-order ones in the x-ray rocking curves decreases. Dynamical theory is employed to simulate the measured x-ray diffraction data. Excellent agreement between the experimental curves and the simulations is achieved when the composition, thickness and stress variations caused by interdiffusion are taken into account. It is found that the significant In-Ga intermixing occurs even in the as-grown InAs/GaAs quantum dots. The estimated diffusion coefficient is 1.8 x 10(-17) cm(2) (.) s(-1) at 650 degreesC, 3.2 x 10(-17) cm(2 .) s(-1) at 750 degreesC, and 1.2 x 10(-14) cm(2 .) s(-1) at 850 degreesC.
Modeling Uphill Diffusion of Mg Implants in Gaas Using Suprem-Iv

HG ROBINSON,MD DEAL,G AMARATUNGA,PB GRIFFIN,DA STEVENSON,JD PLUMMER

DOI: https://doi.org/10.1063/1.351354

IF: 2.877

1992-01-01

Journal of Applied Physics

Abstract:Transient, uphill diffusion of implanted Mg in GaAs during a 900 °C anneal is simulated using suprem-iv. The diffusion is believed to occur via the substitutional-interstitial-diffusion (SID) mechanism, with excess interstitials and vacancies produced by the implantation process causing this abnormal diffusion behavior. The SID mechanism is shown to be equivalent, in terms of the governing equations, to the interstitial-dopant pair diffusion model used in suprem-iv. This allows one to use suprem-iv, a silicon process simulator that includes dopant–point-defect interactions, to model uphill diffusion once the appropriate diffusivity and defect parameters are included. The profiles of excess interstitials and vacancies produced by the implantation process are obtained from Boltzmann transport equation calculations. The transient uphill diffusion phenomenon can be well simulated using the diffusion model in suprem-iv, with the dopant diffusing from the region of excess interstitials toward the surface and the region of excess vacancies. Once the defect concentrations return to their steady-state levels, either by diffusion, recombination, or capture by sinks, the normal concentration-dependent diffusion into the substrate occurs.
Diffusion of Co and Ga in α-Ti

N.D. Gorev,A.V. Bakulin,S.E. Kulkova

DOI: https://doi.org/10.1016/j.commatsci.2024.113231

IF: 3.572

2024-07-15

Computational Materials Science

Abstract:The diffusion of Co and Ga atoms in α-Ti has been studied using the projector augmented-wave method in combination with the transition state theory. The formation energies of the interstitial and substitutional defects and the corresponding migration and activation energies along two crystallographic directions within the interstitial and vacancy diffusion mechanisms have been calculated. It has been shown that the energetically preferred interstice for the incorporation of both impurities is crowdion. In the case of Co, the formation energy of this defect is only 0.7 eV higher than that of the substitutional defect, while for Ga this difference reaches 2.6 eV. Using the Landman method and the eight-frequency model, the diffusion coefficients of Co and Ga have been calculated within both interstitial and vacancy mechanisms. It has been shown that Co diffusion occurs faster through the interstitials, while Ga diffuses within the vacancy mechanism. The migration and activation energies as well as diffusion coefficients and their anisotropy obtained in these cases are consistent with experimental data.

materials science, multidisciplinary
Diffusion of Be in gallium nitride: Experiment and modelling

Rafał Jakieła,Kacper Sierakowski,Tomasz Sochacki,Małgorzata Iwińska,Michał Fijalkowski,Adam Barcz,Michał Boćkowski

DOI: https://doi.org/10.48550/arXiv.2001.07458

2020-01-21

Materials Science

Abstract:Diffusion mechanism of beryllium in gallium nitride was investigated by analyzing temperature-dependent diffusion profiles from an infinite source. Beryllium atoms were implanted into a high structural quality gallium nitride layer crystallized by halide vapor phase epitaxy on an ammonothermal gallium nitride substrate. Post-implantation annealing was performed at different temperatures, between 1000{\deg}C and 1400{\deg}C, under high nitrogen pressure. Beryllium profiles were analyzed in the as-implanted and annealed samples by secondary ion mass spectrometry. It was shown that the diffusion of the dopant results from the combination of two mechanisms: rapid interstitial and slow interstitial-substitutional diffusion. The pre-exponential factor as well as activation energy for both diffusion paths were determined. Moreover, from the characteristic features of beryllium depth profiles, the formation energies of gallium vacancy and beryllium in interstitial position were calculated and compared to the theoretical values.
Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

EG WANG,LY ZHANG,HY WANG

DOI: https://doi.org/10.1002/pssb.2221550229

1989-01-01

Abstract:AbstractFor the first time a detailed description is presented of electronic properties in (AlAs)n/(GaAs)n (n = 1, 3) superlattices with different vacancies. The local‐ and partial‐DOS of the vacancy neighbor atoms are calculated within the tight‐binding approximation including nearest and next‐nearest neighbor interactions. The shift of the band‐edge in the point‐defect structures is about 0.14 eV, which is very similar to that of bulk GaAs material and confirm that the top of the valence‐band of these kind of thin superlattices is derived from the As anion p states, and the bottom of the conduction‐band from the Ga or Al cation. Also a negative center is found around a group‐III atom vacancy in the bulk and a local field, which is similar to that of an acceptor impurity, across the interface. A comparison with AlAs/GaAs superlattices with and without impurities is given.
First-Principles Study of Recombination-Enhanced Migration of an Interstitial Magnesium in Gallium Nitride

Yuansheng Zhao,Kenji Shiraishi,Tetsuo Narita,Atsushi Oshiyama

2024-05-02

Abstract:The stable and metastable configurations of interstitial Mg in GaN and its migration energy barriers are studied from first-principles calculations. In addition to the conventional octahedral (O, global energy minimum) and tetrahedral (T, metastable) interstitial sites, we discover two new metastable interstitial complexes with formation energy lower than or close to that of T configuration but higher than O. Except for Mg at O site which only has +2 charge state, all other configurations also permit charge states +1 or 0. The minimum migration energy barrier for Mg$^{++}$ between O sites is found to be 1.95 eV. We further find that, when Fermi energy is close to the conduction band, the migration between O sites via metastable configurations occur through a recombination-enhanced mechanism in which the charge state changes from +2 at O site to 0 at metastable sites by consecutive capture of two electrons during the migration. This process greatly reduces the migration energy barrier to as low as 1.47 eV. This value is consistent with experiments, and we also discuss the role of intrinsic defects in the migration of Mg.

Materials Science
Self-Diffusion of Ge in Amorphous Ge x Si1- x Films Studied In Situ by Neutron Reflectometry

Erwin Hüger,Jochen Stahn,Harald Schmidt

DOI: https://doi.org/10.1021/acsmaterialsau.4c00046

2024-07-23

Abstract:Ge x Si1-x alloys are gaining renewed interest for many applications in electronics and optics, especially for miniaturized devices showing quantum size effects. Point defects and atomic diffusion play a crucial role in miniaturized and metastable systems. In the present work, Ge self-diffusion in sputter deposited amorphous Ge x Si1-x alloys is studied in situ as a function of Ge content x = 0.13, 0.43, 0.8, and 1.0 by neutron reflectometry. The determined Ge self-diffusivities obey the Arrhenius law in the investigated temperature ranges. The higher the Ge content x, the higher the Ge self-diffusivity at the same temperature. The activation enthalpy decreases with x from 4.4 eV for self-diffusion in pure silicon films to about 2 eV self-diffusion in Ge0.8Si0.2 and Ge. The decrease of the activation enthalpy for amorphous Ge x Si1-x is similar to the case of crystalline Ge x Si1-x . Possible explanations are discussed.
First-principles Study of the Diffusion of Ga Via Interstitial-Mediated Mechanisms in ZnO

Gui-Yang Huang,Chong-Yu Wang,Jian-Tao Wang

DOI: https://doi.org/10.1016/j.scriptamat.2009.04.018

IF: 6.302

2009-01-01

Scripta Materialia

Abstract:The diffusion of Ga in ZnO via interstitial-mediated mechanisms is investigated by first-principles calculations. Interstitial gallium is found to be thermally unstable and migrates easily into a neighboring zinc lattice site with about a 0.5 eV energy barrier, so the dominant interstitial-mediated mechanisms are the kick-out mechanisms rather than interstitial mechanisms. The energy barrier of gallium diffusion occurring via these kick-out mechanisms is about 0.84-1.21 eV. (C) 2009 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms

Ivan A. Aleksandrov,Konstantin S. Zhuravlev

DOI: https://doi.org/10.1016/j.actamat.2024.119854

2024-04-02

Abstract:Processes of diffusion of As and P atoms in InP and InAs, and atomic and energy structure of group-V vacancies and interstitial P and As atoms in InP and InAs have been investigated using density functional theory. Formation energies of group-V vacancies in InP and InAs and P and As interstitial atoms in InP and InAs have been calculated with hybrid functional. The main types of migration jumps have been determined, and the energy favorable migration paths and migration barriers of As and P atoms diffusion in InP and InAs via vacancies and interstitial atoms have been calculated using climbing image nudged elastic band method. In the case of diffusion of As and P atoms in InP and InAs via interstitial atoms the diffusion process occurs via indirect interstitial mechanism. The migration energy barriers for the vacancy diffusion mechanism are 1.5-2.0 eV, the migration energy barriers for the interstitialcy mechanism are 0.3-0.6 eV. The interstitial atoms have higher formation energies compared to the formation energies of the vacancies, and total activation energies of the diffusion are comparable for the vacancy and interstitialcy mechanisms. The obtained results will be useful for modeling of the diffusion processes in semiconductor structures based on InP and InAs.

Materials Science

Sixth cranial nerve palsy and contralateral hemiparesis (Raymond’s syndrome) sparing the face

First-principles Study on Mono-Vacancy Self Diffusion and Recovery in Tungsten Crystal

Investigation of Ga interstitial and vacancy diffusion in $β$-Ga$_2$O$_3$ via split defects: a direct approach via master diffusion equations

Self Diffusion in Silicon Using the Ackland Potential

Gallium interstitial contributions to diffusion in gallium arsenide

Divacancies in the Ga-Related Iii-V Compound Semiconductors - Electronic-Structure and Charge States

On the solubility and diffusivity of the intrinsic point defects in germanium

Electronic-Structure of Neutral and Charged Vacancies in Gaas

X-ray Diffraction and Optical Characterization of Interdiffusion in Self-Assembled InAs/GaAs Quantum-Dot Superlattices

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

A Molecular Dynamics Investigation of the Micro-Mechanism for Vacancy Formation Between Ag3Sn and Βsn under Electromigration

Diffusion of Ga adatoms at the surface of GaAs(001) c(4x4) $α$ and $β$ reconstructions

X-Ray Diffraction Analysis on Gallium-Indium Interdiffusion in Quantum Dot Superlattices

Modeling Uphill Diffusion of Mg Implants in Gaas Using Suprem-Iv

Diffusion of Co and Ga in α-Ti

Diffusion of Be in gallium nitride: Experiment and modelling

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

First-Principles Study of Recombination-Enhanced Migration of an Interstitial Magnesium in Gallium Nitride

Self-Diffusion of Ge in Amorphous Ge x Si1- x Films Studied In Situ by Neutron Reflectometry

First-principles Study of the Diffusion of Ga Via Interstitial-Mediated Mechanisms in ZnO

Migration barriers for diffusion of As and P atoms in InP and InAs via vacancies and interstitial atoms