Abstract:The effect of dislocations on the chemical, electrical and transport properties in oxide materials is important for electrochemical devices, such as fuel cells and resistive switches, but these effects have remained largely unexplored at the atomic level. In this work, by using large-scale atomistic simulations, we uncover how a < 100 >{011} edge dislocation in SrTiO3, a prototypical perovskite oxide, impacts the local defect chemistry and oxide ion transport. We find that, in the dilute limit, oxygen vacancy formation energy in SrTiO3 is lower at sites close to the dislocation core, by as much as 2 eV compared to that in the bulk. We show that the formation of a space-charge zone based on the redistribution of charged oxygen vacancies can be captured quantitatively at atomistic level by mapping the vacancy formation energies around the dislocation. Oxide-ion diffusion was studied for a low vacancy concentration regime (ppm level) and a high vacancy concentration regime (up to 2.5%). In both cases, no evidence of pipe-diffusion, i.e., significantly enhanced mobility of oxide ions, was found as determined from the calculated migration barriers, contrary to the case in metals. However, in the low vacancy concentration regime, the vacancy accumulation at the dislocation core gives rise to a higher diffusion coefficient, even though the oxide-ion mobility itself is lower than that in the bulk. Our findings have important implications for applications of perovskite oxides for information and energy technologies. The observed lower oxygen vacancy formation energy at the dislocation core provides a quantitative and direct explanation for the electronic conductivity of dislocations in SrTiO3 and related oxides studied for red-ox based resistive switching. Reducibility and electronic transport at dislocations can also be quantitatively engineered into active materials for fuel cells, catalysis, and electronics.

First-principles study on migration mechanism in SrTiO3

Oxygen vacancy diffusion in bulk SrTiO3 from density functional theory calculations

First-Principles Study of the Influences of Oxygen Defects Upon the Electronic Properties of Nb-Doped Tio2 by Gga + U Methods

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Thermally Stimulated Relaxation and Behaviors of Oxygen Vacancies in SrTiO3 Single Crystals with (100), (110) and (111) Orientations

First-Principle Study of Strain-Driven Phase Transition in Incipient Ferroelectric Srtio3

The formation and migration of point defects and the thermodynamic behavior of TiD 2 by first-principles calculations

Oxygen Vacancy Migration along Dislocations in SrTiO3 Studied by Cathodoluminescence

Dislocations In Srtio3: Easy To Reduce But Not So Fast For Oxygen Transport

A-Site Doping to Alter Oxygen Vacancy Diffusion in SrTiO 3

Atomic Origin of Ti-deficient Dislocation in SrTiO3 Bicrystals and Their Electronic Structures

Localized versus itinerant states created by multiple oxygen vacancies in SrTiO3

First-principles modeling of oxygen interaction with SrTiO3(001) surface: Comparative density-functional LCAO and plane-wave study

A first principles study of the stability and mobility of defects in titanium carbide

Self-consistent DFT+$U$+$V$ study of oxygen vacancies in SrTiO$_3$

Cathodoluminescence study of oxygen vacancy migration along dislocation in SrTiO3

Atomic Origin of Ti Deficient Dislocation in SrTiO3 Bicrystal and Their Electronic Structures

Oxygen vacancies in SrTiO$_{3}$ thin films at finite temperatures: A first-principles study

Ab Initio Molecular Dynamics Simulations of Threshold Displacement Energies in Srtio3

Electron Localization Enhances Cation Diffusion in Reduced ZrO2, CeO2 and BaTiO3

Atomistic calculations of charged point defects at grain boundaries in SrTiO$_3$