Understanding how junction resistances impact the conduction mechanism in nano-networks
Cian Gabbett,Adam G. Kelly,Emmet Coleman,Luke Doolan,Tian Carey,Kevin Synnatschke,Shixin Liu,Anthony Dawson,Domhnall O’Suilleabhain,Jose Munuera,Eoin Caffrey,John B. Boland,Zdeněk Sofer,Goutam Ghosh,Sachin Kinge,Laurens D. A. Siebbeles,Neelam Yadav,Jagdish K. Vij,Muhammad Awais Aslam,Aleksandar Matkovic,Jonathan N. Coleman
DOI: https://doi.org/10.1038/s41467-024-48614-5
IF: 16.6
2024-05-28
Nature Communications
Abstract:Abstract Networks of nanowires, nanotubes, and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the resistance between the particles, often referred to as the junction resistance. Minimising the junction resistance has proven to be challenging, partly because it is difficult to measure. Here, we develop a simple model for electrical conduction in networks of 1D or 2D nanomaterials that allows us to extract junction and nanoparticle resistances from particle-size-dependent DC network resistivity data. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ω for silver nanosheets to 24 GΩ for WS 2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be obtained simultaneously from AC impedance spectra of semiconducting nanosheet networks. Through our model, we use the impedance data to directly link the high mobility of aligned networks of electrochemically exfoliated MoS 2 nanosheets (≈ 7 cm 2 V −1 s −1 ) to low junction resistances of ∼2.3 MΩ. Temperature-dependent impedance measurements also allow us to comprehensively investigate transport mechanisms within the network and quantitatively differentiate intra-nanosheet phonon-limited bandlike transport from inter-nanosheet hopping.
multidisciplinary sciences