Constructing 100 MΩ and 1 GΩ Resistance Standards via Star-Mesh Transformations

Dean G. Jarrett,Albert F. Rigosi,Dominick S. Scaletta,Ngoc Thanh Mai Tran,Heather M. Hill,Alireza R. Panna,Cheng Hsueh Yang,Yanfei Yang,Randolph E. Elmquist,David B. Newell

2024-02-02

Abstract:A recent mathematical framework for optimizing resistor networks to achieve values in the M{\Omega} through G{\Omega} levels was employed for two specific cases. Objectives here include proof of concept and identification of possible apparatus limitations for future experiments involving graphene-based quantum Hall array resistance standards. Using fractal-like, or recursive, features of the framework allows one to calculate and implement network designs with substantially lower-valued resistors. The cases of 100 M{\Omega} and 1 G{\Omega} demonstrate that, theoretically, one would not need more than 100 quantum Hall elements to achieve these high resistances.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve high - precision high - resistance standard resistors (100 MΩ and 1 GΩ) by optimizing the resistance network design, and to verify the feasibility of these designs in actual measurements. Specifically:

1. **Prove the concept and identify device limitations**: By constructing two specific cases (resistance standards of 100 MΩ and 1 GΩ), verify the validity of the mathematical framework and identify the device limitations that may be encountered in future experiments. This provides theoretical and technical support for future graphene - based quantum Hall array resistance standards (QHARS).

2. **Reduce the number of required components**: Utilize the recursive star - mesh transformation method to significantly reduce the number of quantum Hall components required to achieve high resistance. Theoretically, no more than 100 quantum Hall components are required to achieve high resistances of 100 MΩ and 1 GΩ.

3. **Verify two measurement methods**:
- For the 100 MΩ resistor, use the dual - source bridge for measurement.
- For the 1 GΩ resistor, use the teraohmmeter for measurement.

4. **Standardize high - resistance resistors**: Ensure that these high - resistance resistors can be reliably used in calibration and other high - precision measurements, thereby shortening the traceability chain for high - resistance calibration.

### Mathematical formulas
The formulas involved in the paper include:

1. **Virtual resistance calculation formula**:
\[
R_{ij} = R_i R_j \sum_{k = 1}^{N}\frac{1}{R_k}
\]
where \( R_{ij} \) is the virtual resistance, \( R_i \) and \( R_j \) are the actual resistances, and \( N \) is the total number of resistances.

2. **Formula for the total number of quantum Hall components**:
\[
D(M,\xi,q_{M:ij})=\frac{2^M}{\xi}(\xi q_{M:ij}+ 1)^2-\frac{2^M}{\xi}+(2^M - 1)\xi
\]
where \( M \) is the recursive factor, \( \xi \) is the number of grounded branches, and \( q_{M:ij} \) is the effective resistance coefficient.

### Experimental results
- **100 MΩ measurement**: Measured by the dual - source bridge, the finally measured effective resistance is approximately 97.7 MΩ, with an error of less than 1%.
- **1 GΩ measurement**: Measured by the teraohmmeter, the finally measured effective resistance is approximately 1.02 GΩ, and the error is also less than 1%.

These results verify the effectiveness of the recursive star - mesh transformation method and provide a solid foundation for the future manufacturing of high - resistance resistance standards.