Abstract:We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as desired for the lattice-matched integration of optoelectronic devices with the standard Si technology. The growth mode as well as the chemical, morphological and structural properties of samples prepared using different growth temperatures and N precursor fluxes were analyzed by RHEED, XRD, RBS, NRA, EDX spectroscopy, AFM and TEM. Our results show that, up to x = 0.04, it is possible to synthesize smooth and chemically homogeneous GaP1-xNx layers with a high-structural quality in a 2D fashion, namely, layer-by-layer. For a given N mole fraction, the layer-by-layer growth mode is favored by lowering the growth temperature while decreasing the N precursor flux. As the flux of the N precursor is increased at a given temperature to enhance N incorporation, the quality of the layers degrades upon exceeding a temperature-dependent threshold; above this threshold, the growing layer experiences a growth mode transition from 2D to 3D after reaching a critical thickness of a few nm. Following that transition, the morphology and the chemical composition become modulated along the [110] direction with a period of several tens of nm. The surface morphology is then characterized by the formation of {113}-faceted wires, while the N concentration is enhanced at the troughs formed in between adjacent (113) and (-1-13) facets. We conclude on the feasibility of fabricating homogeneous thick GaP1-xNx layers lattice matched to Si (x = 0.021) or even with N content up to x=0.04. The possibility of exceeding a N mole fraction of 0.04 without inducing coupled morphological-compositional modulations has also been demonstrated when the layer thickness is kept below the critical value for the 2D-3D growth mode transition.

A growth diagram for plasma-assisted molecular beam epitaxy of GaN nanocolumns on Si(111)

In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

A comprehensive diagram to grow InAlN alloys by plasma-assisted molecular beam epitaxy

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

Structural Modulation of GaN Nanowires Grown in High-Density Plasma Environment

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Improved control over spontaneously formed GaN nanowires in molecular beam epitaxy using a two-step growth process

In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction

Model for Low-Temperature Growth of Gallium Nitride

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Molecular Beam Epitaxy Growth of GaN, AlN and InN

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials

Observation of self-assembled InGaN/GaN superlattice structure grown on N-polar GaN by plasma-assisted molecular beam epitaxy

Growth and characterization of low-temperature grown GaN with high Fe doping

Molecular dynamics simulations and experimental studies on low-temperature growth of GaN

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates