Abstract:The first quaternary Zintl phase Ba8Zn2–xIn3+xBi10 (x = 0.21–0.47) was synthesized by reacting the elements at high temperature and, its crystal structure determined from single crystal X-ray diffraction data. It crystallizes in the monoclinic space group C2/m, with a large unit cell volume, V = 3351.3(6) Å3 (Z = 4), which is a new structure type. The basic structural building blocks are MBi4 tetrahedra (M = In or Zn/In mix) that are condensed by sharing corners when mainly centered by In atom, or corners and edges when mainly centered by Zn atom. In turn, these tetrahedra form two markedly distinct one-dimensional (1-D) polyanionic substructures, defining two virtually distinct sub-structures. Corollary, the title structure can be viewed as an intergrowth of two imaginary quaternary phases (1A) “Ba3Zn1–yIn1+yBi4” and (1B) “Ba5Zn1–zIn2+zBi6” (with x = y+z). The polyanionic system in the 1A block, [Zn1–yIn1+yBi4]6– consists of dimeric pentagonal rings that are stacked to form double pentagonal tubes running in the b-direction, and filled with Ba cations. The polyanion in the 1B block, [Zn1–zIn2+zBi6]6– consists of large ribbons formed by the condensation of two strands of dimeric corner sharing infinite chains of [InBi4] tetrahedra with one chain of edge-sharing [ZnBi4] tetrahedra. The Zn/In atomic site preferences appeared to be one decisive factor behind the structural complexity and, it seems to be directed mainly by the atomic valence states and sizes, as well as the electrostatic factors, aiming to optimize the lattice reticular energy, as confirmed by total energy calculations on three ordered models using DFT methods. According to the Zintl-Klemm concept (ZKC) and the 8–N rules, the compound should be charge balanced for x = 0. Therefore, the experimentally observed phase width (x = 0.21 to 0.47) indicates that the system is amenable for substantial (n- or p-type) doping, to fine tune their transport properties, like the charge carrier concentration and charge mobility, via specific chemical substitutions at specific sites of the two polyanionic blocks. The DFT electronic band structure calculations on the hypothetical fully ordered model ‘Ba8Zn2In3Bi10’ (x = 0), also predicted the title compound to be a semiconductor with narrow band gap. Therefore, the title phase fully qualified as a promising thermoelectric material candidate.

Study of the structural and electronic properties of semimetallic InBi: first-principles calculation of compound with peculiarities of the electronic structure

Electronic properties of InBixP1-x alloy in the P-rich range calculated using first-principles calculations

The Structural, Elastic and Electronic Properties of BiI3: First-principles Calculations

First-principles Study of High-Pressure Phase Stability and Superconductivity of Bi4I4

Tunable Electronic Structure and Topological Properties of $LnPn$ ($Ln$=Ce, Pr, Gd, Sm, Yb; $Pn$=Sb, Bi)

Unexpected Semimetallic BiS 2 at High Pressure and High Temperature.

Synthesis, Physical Properties, And Band Structure Of The Layered Bismuthide Ptbi2

Electronic Structure of Two-Dimensional in and Bi Metal on BN Nanosheets.

The First Quaternary Bismuthide Zintl Phase Ba8Zn2-xIn3+xBi10 with complex Crystal Structure

Ternary Bismuthide SrPtBi2: Computation and Experiment in Synergism to Explore Solid-State Materials

Enhanced thermoelectric performance of polycrystalline InSb1−xBix by using isoelectronic substitution on the Sb site

Structural and Electronic Properties of Amorphous Insb from First Principles Study

A topological material in the III-V family: heteroepitaxial InBi on InAs

Comprehensive analysis of the structural, electronic, elastic and optical properties of ternary chalcogenides pnictogens InPnCh 3 (Pn = Bi, Sb; Ch = S, Se) compounds: First-Principles calculations

Density Functional Theory Study of ZnIn2S4 and CdIn2S4 Polymorphs Using Full‐Potential Linearized Augmented Plane Wave Method and Modified Becke–Johnson Potential

Structural investigation of the quasi-one-dimensional topological insulator Bi$_4$I$_4$

First-principles study of electronic structure of $Bi_2Sr_2Ca_2Cu_3O_{10}$

Phase-Transition Induced Elastic Softening and Band Gap Transition in Semiconducting Pbs at High Pressure

Electronic properties of bismuth nanostructures

Composition Dependence of Structural and Electronic Properties of Quaternary InGaNBi

Electronic properties and effective masses of hexagonal Bi9O7.5S6: First-principles calculations