Printed, sub-2V ZnO electrolyte gated transistors and inverters on plastic

Kihyon Hong,Se Hyun Kim,Keun Hyung Lee,C Daniel Frisbie
DOI: https://doi.org/10.1002/adma.201300211
2013-07-05
Abstract:Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm(-2) V(-1) s(-1) ), low operation voltage (<2 V), and good electrical/mechanical stabilities.
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