Tensile strain induced brightening of momentum forbidden dark exciton in WS$_2$

Tamaghna Chowdhury,Sagnik Chatterjee,Dibyasankar Das,Ivan Timokhin,Pablo Díaz Núñez,Gokul M. A.,Suman Chatterjee,Kausik Majumdar,Prasenjit Ghosh,Artem Mishchenko,Atikur Rahman

2023-12-26

Abstract:Transition-metal dichalcogenides (TMDs) host tightly bound quasi-particles called excitons. Based on spin and momentum selection rules, these excitons can be either optically bright or dark. In tungsten-based TMDs, momentum-forbidden dark exciton is the energy ground state and therefore it strongly affect the emission properties. In this work, we brighten the momentum forbidden dark exciton by placing WS$_2$ on top of nanotextured substrates which put the WS$_2$ layer under tensile strain, modifying electronic bandstructure. This enables phonon assisted scattering of exciton between momentum valleys, thereby brightening momentum forbidden dark excitons. Our results will pave the way to design ultrasensitive strain sensing devices based on TMDs.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to make the momentum - forbidden dark excitons in WS₂ emit light more brightly by applying tensile stress. Specifically, in transition metal dichalcogenides (TMDs), there are optically bright excitons and dark excitons determined by spin and momentum selection rules. In tungsten - based TMDs, the momentum - forbidden dark excitons are the energy ground state and have a significant impact on the emission characteristics. Therefore, controlling these dark excitons is crucial for the design of new optical devices.

In this work, the authors placed WS₂ on a nanotextured substrate to make it in a state of tensile stress, thereby changing the electronic band structure. This enables phonon - assisted scattering to occur between momentum valleys, thus making the momentum - forbidden dark excitons emit light more brightly. The experimental results show that this method can effectively regulate the emission properties of dark excitons, paving the way for the design of ultrasensitive strain - sensing devices based on TMDs.

### Formula Summary

1. **Exciton Binding Energy Formula**:
\[
E_b=\frac{\mu e^4}{2\hbar^2\epsilon^2(n - \frac{1}{2})^2}
\]
where:
- \(\mu = \frac{m_e m_h}{m_e + m_h}\) is the reduced mass of the exciton
- \(m_e\) and \(m_h\) are the effective masses of the electron and the hole respectively
- \(\epsilon\) is the dielectric constant
- \(e\) is the electron charge
- \(n\) is the principal quantum number

2. **Temperature - Dependent Resonance Energy Change Formula**:
\[
E(T)=E(0)-S\left\langle\hbar\omega\right\rangle\left(\coth\left(\frac{\left\langle\hbar\omega\right\rangle}{k_B T}\right)-1\right)
\]
where:
- \(E(T)\) is the resonance energy at temperature \(T\)
- \(S\) is the dimensionless exciton - phonon coupling constant
- \(k_B\) is the Boltzmann constant
- \(\left\langle\hbar\omega\right\rangle\) is the average phonon energy

3. **FWHM Temperature - Dependent Formula**:
\[
\gamma=\gamma_0 + c_1 T + c_2\frac{\hbar\omega}{k_B T - 1}
\]
where:
- \(\gamma_0\) is the inherent FWHM
- \(c_1\) and \(c_2\) are constants
- \(\hbar\omega\) is the phonon energy

### Conclusion

By applying tensile stress, the authors have successfully made the momentum - forbidden dark excitons emit light more brightly. This finding provides new ideas and methods for the design of ultrasensitive strain - sensing devices based on TMDs.