Abstract:To deal with the Hamiltonian model in InAs QDs with a single electron, we’ve taken the SO interaction as a perturbation term, calculated the SO matrix elements under Fock-Darwin eigenfunction which are used for second order corrections on the energies and wave functions, and considered the influence of new energy levels on g factor and effective mass m*. The expression of phonon-assisted electron spin relaxation rate Γ in InAs QDs is deduced, which shows different dependences on confined potential frequency ω0, temperature T, vertical height z0 and magnetic field B. Among them, temperature for the electron spin relaxation plays a dominant role, followed by lateral confinement potential frequency, magnetic field and the vertical height, in order of importance. (1) Growth of ω0, which corresponds to the decrease of the effective transverse size d in InAs QDs, suppresses the increase of the rate Γ. (2) The temperature T affects the rate Γ evidently, which will reduce the inhibition of ω0 on Γ. With increase of the temperature from 1 K to 7 K, the spin inversion relaxation rate grows explosively from 103 s－1 to 108 s－1. (3) The rate Γ decreases with the growth of the vertical height z0 and have the order of magnitude 100－103 s-1 at T=1 K, whereas the influence of the temperature increase (at T=6 K) on the rate will gradually exceed that of the height growth. (4) At different frequencies ω0 all curves of the rate Γ versus magnetic field B have a peak that almost appears at the same field, which is attributed to the contribution of the Zeeman term H ^ Z exceeding that of H ^ SO since there is a considerable g factor in InAs material.

Influence of Gamma-X mixing on optical orientation and alignment of excitons in (In,Al)As/AlAs quantum dots

Optical Orientation of Excitons in a Longitudinal Magnetic Field in Indirect-Band-Gap (In,Al)As/AlAs Quantum Dots with Type-I Band Alignment

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Optical Study of Spatially Ordered Inas Quantum Dots in Disk-Like Structures

Exciton Spin Dynamics of Colloidal Cdte Nanocrystals in Magnetic Fields

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

Dark-bright excitons mixing in alloyed InGaAs self-assembled quantum dots

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells

Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

Parametric Properties of the Electron Spin Relaxation Due to Spin-Orbit Interaction in Inas Quantum Dots

Theoretical analysis of influence of random alloy fluctuations on the opto-electronic properties of site-controlled (111)-oriented InGaAs/GaAs quantum dots

Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms

Coupling of the triplet states of a negatively charged exciton in a quantum dot with the spin of a magnetic atom

Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots

Interplay between hyperfine and anisotropic exchange interactions in exciton luminescence of quantum dots

Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

Nuclear magnetic resonance inverse spectra of InGaAs quantum dots: Atomistic level structural information

Fine structure and magneto-optics of exciton, trion, and charged biexciton states in single InAs quantum dots emitting at 1.3 um

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under non-resonant ultra-low power optical excitation

Resonant spin orientation at the exciton level anticrossing in InP quantum dots