Nano-ARPES investigation of twisted bilayer tungsten disulfide

Giovanna Feraco,Oreste De Luca,Przemysław Przybysz,Homayoun Jafari,Oleksandr Zheliuk,Ying Wang,Philip Schädlich,Pavel Dudin,José Avila,Jianting Ye,Thomas Seyller,Paweł Dąbrowski,Paweł Kowalczyk,Jagoda Sławińska,Petra Rudolf,Antonija Grubišić-Čabo
2023-12-07
Abstract:The diverse and intriguing phenomena observed in twisted bilayer systems, such as graphene and transition metal dichalcogenides, prompted new questions about the emergent effects that they may host. However, the practical challenge of realizing these structures on a scale large enough for spectroscopic investigation, remains a significant hurdle, resulting in a scarcity of direct measurements of the electronic band structure of twisted transition metal dichalcogenide bilayers. Here we present a systematic nanoscale angle-resolved photoemission spectroscopy investigation of bulk, single layer, and twisted bilayer WS2 with a small twist angle of 4.4°. The experimental results are compared with theoretical calculations based on density functional theory along the high-symmetry directions {\Gamma}-K and {\Gamma}-M. Surprisingly, the electronic band structure measurements suggest a structural relaxation occurring at 4.4° twist angle, and formation of large, untwisted bilayer regions.
Chemical Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: in twisted bilayer tungsten disulfide (WS₂), when the twist angle is 4.4°, whether the electronic band structure will exhibit the strong correlation effect and flat - band characteristics predicted by theory. Specifically, the research aims to verify the electronic structure at this specific twist angle through nano - angle - resolved photoemission spectroscopy (nano - ARPES) experiments and explore the differences between the actual observation results and theoretical expectations. ### Research Background In recent years, twisted bilayer systems in two - dimensional materials (such as graphene and transition metal dichalcogenides TMDs) have exhibited a variety of novel phenomena, especially the flat - band and the strong correlation effects caused by the flat - band at certain specific twist angles. These effects include superconductivity, Mott insulating state, and ferromagnetic behavior, etc. However, it is still a challenge to obtain a large enough sample for spectroscopic measurements, resulting in very limited data on the direct measurement of the electronic band structure of twisted bilayer TMDs. ### Specific Problems 1. **Experimental Verification of Theoretical Predictions**: - Theoretical predictions indicate that at a twist angle close to 4°, the twisted bilayer WS₂ may form an electronic structure with rich correlation effects, such as flat - bands. - This research attempts to verify whether these theoretical predictions are correct through nano - ARPES experiments. 2. **Influence of Structural Relaxation**: - The experimental results show that the electronic band structure of the WS₂ bilayer system with a twist angle of 4.4° is more similar to the untwisted bilayer structure rather than the expected structure with flat - band characteristics. - This phenomenon has led to the discussion of structural relaxation, that is, at a small twist angle, the system may form a large - area untwisted region, thus affecting the electronic structure. ### Main Findings - **Experimental Results Do Not Match Theory**: Although the theory predicts the existence of flat - bands, the experimental data does not show this feature. Instead, the experimentally measured electronic band structure is very similar to the untwisted AA' - stacked bilayer WS₂. - **Structural Relaxation Explanation**: The research shows that when the twist angle is 4.4°, the system undergoes structural relaxation and forms a large - area untwisted bilayer region, causing the ARPES signal to mainly come from these relaxation regions rather than the twisted regions. ### Conclusion This research reveals that at a specific twist angle, the electronic structure of the twisted bilayer WS₂ may be significantly affected by structural relaxation, which provides a new perspective for understanding the relaxation effects in two - dimensional materials and their influence on electronic properties. In addition, the research emphasizes the importance of considering relaxation effects when exploring twisted systems with specific properties.