ARPES signatures of few-layer twistronic graphenes

J. E. Nunn,A. McEllistrim,A. Weston,A. Garcia-Ruiz,M. D. Watson,M. Mucha-Kruczynski,C. Cacho,R. Gorbachev,V.I. Fal'ko,N.R. Wilson

DOI: https://doi.org/10.1021/acs.nanolett.3c01173

2023-04-05

Abstract:Diverse emergent correlated electron phenomena have been observed in twisted graphene layers due to electronic interactions with the moiré superlattice potential. Many electronic structure predictions have been reported exploring this new field, but with few momentum-resolved electronic structure measurements to test them. Here we use angle-resolved photoemission spectroscopy (ARPES) to study the twist-dependent ($1^\circ < \theta < 8^\circ$) electronic band structure of few-layer graphenes, including twisted bilayer, monolayer-on-bilayer, and double-bilayer graphene (tDBG). Direct comparison is made between experiment and theory, using a hybrid $\textbf{k}\cdot\textbf{p}$ model for interlayer coupling and implementing photon-energy-dependent phase shifts for photo-electrons from consecutive layers to simulate ARPES spectra. Quantitative agreement between experiment and theory is found across twist angles, stacking geometries, and back-gate voltages, validating the models and revealing displacement field induced gap openings in twisted graphenes. However, for tDBG at $\theta=1.5\pm0.2^\circ$, close to the predicted magic-angle of $\theta=1.3^\circ$, a flat band is found near the Fermi-level with measured bandwidth of $E_w = 31\pm5$ meV. Analysis of the gap between the flat band and the next valence band shows significant deviations between experiment ($\Delta_h=46\pm5$meV) and the theoretical model ($\Delta_h=5$meV), indicative of the importance of lattice relaxation in this regime.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: through the comparison between experiments and theoretical simulations, to verify and understand the electronic band structures of few - layer twisted graphene (including twisted bilayer graphene, monolayer - bilayer graphene, and double - bilayer graphene) at small twist angles (1° < θ < 8°). Specifically:

1. **Verify the validity of the model**:
- Researchers use angle - resolved photoemission spectroscopy (ARPES) to study the electronic band structures of few - layer graphene at different twist angles and stacking geometries.
- By comparing the experimental results with theoretical simulations based on the hybrid \( k\cdot p \) model, the validity of the model is verified.

2. **Explore the electronic properties near the magic angle**:
- In the case of approaching the magic angle (θ ≈ 1.3°), especially in twisted double - bilayer graphene, researchers have found a flat band near the Fermi level, with a bandwidth of \( E_w = 31\pm5 \, \text{meV} \).
- The energy gap \( \Delta_h = 46\pm5 \, \text{meV} \) between the experimentally measured flat band and the underlying valence band is significantly larger than the theoretically predicted value \( \Delta_h = 5 \, \text{meV} \), which indicates the importance of lattice relaxation effects on the low - energy electronic structure.

3. **Study the influence of the back - gate voltage on the electronic structure**:
- By introducing a back - gate electrode, researchers are able to regulate the carrier concentration in graphene and observe the energy shift of the Dirac point caused by the back - gate voltage and the opening of the energy gap in bilayer graphene.
- These results reveal the combined influence of electrostatic doping and lateral electric fields on the electronic structure and verify the validity of the self - consistent simulation method.

In summary, this paper aims to deeply understand the electronic band structures of few - layer twisted graphene at different twist angles and stacking geometries through the combination of ARPES experiments and theoretical simulations, especially the special electronic properties near the magic angle and their responses to an applied electric field.