Revealing the Charge Density Wave Proximity Effect in Graphene on 1T-TaS$_2$

Nikhil Tilak,Michael Altvater,Sheng-Hsiung Hung,Choong-Jae Won,Guohong Li,Taha Kaleem,Sang-Wook Cheong,Chung-Hou Chung,Horng-Tay Jeng,Eva Y. Andrei

DOI: https://doi.org/10.1038/s41467-024-51608-y

2024-09-26

Abstract:The proximity-effect, whereby materials in contact appropriate each others electronic-properties, is widely used to induce correlated states, such as superconductivity or magnetism, at heterostructure interfaces. Thus far however, demonstrating the existence of proximity-induced charge-density-waves (PI-CDW) proved challenging. This is due to competing effects, such as screening or co-tunneling into the parent material, that obscured its presence. Here we report the observation of a PI-CDW in a graphene layer contacted by a 1T-TaS2 substrate. Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical-modeling, we show that the coexistence of a CDW with a Mott gap in 1T-TaS2 coupled with the Dirac-dispersion of electrons in graphene, makes it possible to unambiguously demonstrate the PI-CDW by ruling out alternative interpretations. Furthermore, we find that the PI-CDW is accompanied by a reduction of the Mott gap in 1T-TaS2 and show that the mechanism underlying the PI-CDW is well-described by short-range exchange-interactions that are distinctly different from previously observed proximity effects.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to prove whether there is a proximity - induced charge density wave (PI - CDW) in the graphene/1T - TaS₂ heterostructure. Specifically, the researchers hope to clarify the following points through experiments and theoretical models:

1. **Prove the existence of PI - CDW**: Through scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) techniques, combined with theoretical modeling, prove that there is indeed a charge density wave induced by the 1T - TaS₂ substrate in the graphene layer.

2. **Exclude other possible explanations**: Ensure that the observed phenomena are not caused by other factors such as electrostatic shielding or co - tunneling effects. In particular, exclude the charge modulation phenomena caused by factors such as interface scattering, doping or strain.

3. **Reveal the mechanism of PI - CDW**: Explore the specific formation mechanism of PI - CDW, and compare it with other known proximity effects (such as superconducting proximity effects, magnetic proximity effects, etc.), and explain its uniqueness.

### Background of key issues

- **Proximity effect**: When two materials are in contact, their electronic properties will influence each other, thus inducing certain related states (such as superconducting states or magnetic states). However, for charge density wave (CDW), previous studies have difficulty in clearly distinguishing whether PI - CDW really exists, because factors such as interface scattering and electrostatic shielding will interfere with the observation results.

- **Characteristics of 1T - TaS₂**: 1T - TaS₂ has special charge density waves and Mott gaps, which make it an ideal candidate material for studying PI - CDW.

- **Role of graphene**: The Dirac - dispersion electrons of graphene can interact with the CDW of 1T - TaS₂, providing unique conditions for studying PI - CDW.

Through the above methods, the researchers finally successfully observed PI - CDW in the graphene/1T - TaS₂ heterostructure, and found that this effect is driven by short - range exchange interactions, which is different from other previously observed proximity effects. In addition, they also found that PI - CDW is accompanied by the decrease of the Mott gap in 1T - TaS₂, further confirming the existence of this novel phenomenon and its mechanism.