Charge-Density-Wave Proximity Effects in Graphene

Boram Kim,Jeehoon Park,Jinshu Li,Hongsik Lim,Gyuho Myeong,Wongil Shin,Seungho Kim,Taehyeok Jin,Qi Zhang,Kyunghwan Sung,Kenji Watanabe,Takashi Taniguchi,Euyheon Hwang,Sungjae Cho
DOI: https://doi.org/10.48550/arXiv.2201.04844
2022-10-09
Abstract:Certain layered transition metal dichalcogenides (TMDCs), such as 1T-TaS2, show a rich collection of charge density wave (CDW) phases at different temperatures, and their atomic structures and electron conductions have been widely studied. However, the properties of CDW systems that are integrated with other electronic materials have not yet been investigated. Here, we incorporate the CDW properties of TMDCs into the electronic transport of graphene for the first time. During CDW phase transitions, anomalous transport behaviors that are closely related to the formation of correlated disorder in TMDCs were observed in the graphene sample used in this study. In particular, the commensurate CDW phase forms a periodic charge distribution with potential fluctuations, and thus constitutes correlated charged impurities, which decreases resistivity and enhances carrier mobility in graphene. The CDW-graphene heterostructure system demonstrated here paves the way to controlling the temperature-dependent carrier mobility and resistivity of graphene and to developing novel functional electronic devices such as graphene-based sensors and memory devices.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The main problem that this paper attempts to solve is to study the changes in the electronic transport properties of graphene when it is combined with transition metal dichalcogenides (such as 1T - TaS₂) having a charge density wave (CDW) phase. Specifically, the authors focus on: 1. **The influence of CDW phase transition on the transport characteristics of graphene**: By introducing the CDW properties of 1T - TaS₂ into the electronic transport of graphene, the abnormal transport behavior of graphene at different CDW phase transition temperatures was observed and explained. 2. **The influence of relevant disorder effects on the resistivity and carrier mobility of graphene**: The influence of the periodic charge distribution formed during different CDW phase transitions of 1T - TaS₂ and the related charged impurities on the resistivity and carrier mobility of graphene was studied. 3. **The possibility of developing new functional electronic devices**: Based on the above research results, how to use the CDW - graphene heterostructure to control the temperature - dependent carrier mobility and resistivity of graphene and develop new functional electronic devices, such as graphene - based sensors and memories, was explored. ### Specific problems and solutions #### 1. Research background - **Known phenomena**: Proximity effects such as superconductivity, ferromagnetism, and spin - orbit coupling have been widely studied in semiconductors and metals. - **Unsolved problems**: The properties of CDW systems combined with other electronic materials have not been deeply studied. #### 2. Experimental design - **Material selection**: 1T - TaS₂ with rich CDW phase transitions and graphene were selected as research objects. - **Experimental method**: 1T - TaS₂ and graphene were combined by van der Waals epitaxy technology to form a heterostructure, and electrical transport measurements were carried out. #### 3. Main findings - **Abnormal transport behavior**: During the CDW phase transition, graphene exhibits abnormal transport behavior. Especially near the transition temperature from NCCDW to CCDW, the resistivity of graphene suddenly decreases and the carrier mobility significantly increases. - **Mechanism explanation**: These changes are attributed to the formation of star - of - David clusters in 1T - TaS₂ and the correlation of charged impurities caused by them. In the CCDW phase, these charged impurities show a periodic distribution, reducing the scattering sources in graphene, thereby increasing the carrier mobility. #### 4. Application prospects - **Temperature - dependent control**: By controlling the CDW phase transition, the temperature - dependent regulation of the resistivity and carrier mobility of graphene can be achieved. - **New device development**: This regulatory ability provides the possibility for developing new graphene - based sensors and memories. ### Summary This paper reveals the important role of charged impurity correlation in regulating the electronic transport of graphene by studying the influence of the CDW phase transition of 1T - TaS₂ on the transport characteristics of graphene, and shows the potential of using these effects to develop new functional electronic devices.